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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDS8874

FDS8874

MOSFET N-CH 30V 16A 8SOIC

Fairchild Semiconductor

2,011 -
FDS8874

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 5.5mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 72 nC @ 10 V 30 V ±20V 3990 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDB7042L

FDB7042L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

92,000 -
FDB7042L

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 50A (Ta) 4.5V, 10V 7.5mOhm @ 25A, 10V Surface Mount 2V @ 250mA 51 nC @ 4.5 V 30 V ±12V 2418 pF @ 15 V - - TO-263AB - 83W (Ta) -65°C ~ 175°C (TJ)
FQPF17P06

FQPF17P06

MOSFET P-CH 60V 12A TO220F

Fairchild Semiconductor

64,529 -
FQPF17P06

数据表

QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 120mOhm @ 6A, 10V Through Hole 4V @ 250µA 27 nC @ 10 V 60 V ±25V 900 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 175°C (TJ)
FDD6692

FDD6692

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

64,482 -
FDD6692

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 54A (Ta) 4.5V, 10V 12mOhm @ 14A, 10V Surface Mount 3V @ 250µA 25 nC @ 5 V 30 V ±16V 2164 pF @ 15 V - - TO-252 (DPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
FDPF5N50TYDTU

FDPF5N50TYDTU

MOSFET N-CH 500V 5A TO220F

Fairchild Semiconductor

51,180 -
FDPF5N50TYDTU

数据表

UniFET™ TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 500 V ±30V 640 pF @ 25 V - - TO-220F (LG-Formed) - 28W (Tc) -55°C ~ 150°C (TJ)
FDP6670AL

FDP6670AL

MOSFET N-CH 30V 80A TO220-3

Fairchild Semiconductor

26,591 -
FDP6670AL

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Ta) 4.5V, 10V 6.5mOhm @ 40A, 10V Through Hole 3V @ 250µA 33 nC @ 5 V 30 V ±20V 2440 pF @ 15 V - - TO-220-3 - 68W (Tc) -65°C ~ 175°C (TJ)
FQD6P25TF

FQD6P25TF

MOSFET P-CH 250V 4.7A DPAK

Fairchild Semiconductor

21,864 -
FQD6P25TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 1.1Ohm @ 2.35A, 10V Surface Mount 5V @ 250µA 27 nC @ 10 V 250 V ±30V 780 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
FQPF2N60C

FQPF2N60C

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

10,020 -
FQPF2N60C

数据表

QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.7Ohm @ 1A, 10V Through Hole 4V @ 250µA 12 nC @ 10 V 600 V ±30V 235 pF @ 25 V - - TO-220F-3 - 23W (Tc) -55°C ~ 150°C (TJ)
FQU7N20TU

FQU7N20TU

MOSFET N-CH 200V 5.3A IPAK

Fairchild Semiconductor

9,024 -
FQU7N20TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 690mOhm @ 2.65A, 10V Through Hole 5V @ 250µA 10 nC @ 10 V 200 V ±30V 400 pF @ 25 V - - IPAK - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FQD60N03LTM

FQD60N03LTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,500 -
FQD60N03LTM

数据表

QFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 5V, 10V 23mOhm @ 30A, 10V Surface Mount 3V @ 250µA 46 nC @ 10 V 30 V ±16V 900 pF @ 15 V - - TO-252 (DPAK) - 45W (Tc) -55°C ~ 150°C (TJ)
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