| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDS8874MOSFET N-CH 30V 16A 8SOIC Fairchild Semiconductor |
2,011 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 4.5V, 10V | 5.5mOhm @ 16A, 10V | Surface Mount | 2.5V @ 250µA | 72 nC @ 10 V | 30 V | ±20V | 3990 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FDB7042LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
92,000 | - |
|
数据表 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Ta) | 4.5V, 10V | 7.5mOhm @ 25A, 10V | Surface Mount | 2V @ 250mA | 51 nC @ 4.5 V | 30 V | ±12V | 2418 pF @ 15 V | - | - | TO-263AB | - | 83W (Ta) | -65°C ~ 175°C (TJ) |
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FQPF17P06MOSFET P-CH 60V 12A TO220F Fairchild Semiconductor |
64,529 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 120mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 27 nC @ 10 V | 60 V | ±25V | 900 pF @ 25 V | - | - | TO-220F-3 | - | 39W (Tc) | -55°C ~ 175°C (TJ) |
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FDD6692N-CHANNEL POWER MOSFET Fairchild Semiconductor |
64,482 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 54A (Ta) | 4.5V, 10V | 12mOhm @ 14A, 10V | Surface Mount | 3V @ 250µA | 25 nC @ 5 V | 30 V | ±16V | 2164 pF @ 15 V | - | - | TO-252 (DPAK) | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) |
|
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FDPF5N50TYDTUMOSFET N-CH 500V 5A TO220F Fairchild Semiconductor |
51,180 | - |
|
数据表 |
UniFET™ | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | Through Hole | 5V @ 250µA | 15 nC @ 10 V | 500 V | ±30V | 640 pF @ 25 V | - | - | TO-220F (LG-Formed) | - | 28W (Tc) | -55°C ~ 150°C (TJ) |
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FDP6670ALMOSFET N-CH 30V 80A TO220-3 Fairchild Semiconductor |
26,591 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Ta) | 4.5V, 10V | 6.5mOhm @ 40A, 10V | Through Hole | 3V @ 250µA | 33 nC @ 5 V | 30 V | ±20V | 2440 pF @ 15 V | - | - | TO-220-3 | - | 68W (Tc) | -65°C ~ 175°C (TJ) |
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FQD6P25TFMOSFET P-CH 250V 4.7A DPAK Fairchild Semiconductor |
21,864 | - |
|
数据表 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.7A (Tc) | 10V | 1.1Ohm @ 2.35A, 10V | Surface Mount | 5V @ 250µA | 27 nC @ 10 V | 250 V | ±30V | 780 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) |
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FQPF2N60CPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
10,020 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | Through Hole | 4V @ 250µA | 12 nC @ 10 V | 600 V | ±30V | 235 pF @ 25 V | - | - | TO-220F-3 | - | 23W (Tc) | -55°C ~ 150°C (TJ) |
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FQU7N20TUMOSFET N-CH 200V 5.3A IPAK Fairchild Semiconductor |
9,024 | - |
|
数据表 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 690mOhm @ 2.65A, 10V | Through Hole | 5V @ 250µA | 10 nC @ 10 V | 200 V | ±30V | 400 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) |
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FQD60N03LTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
7,500 | - |
|
数据表 |
QFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 5V, 10V | 23mOhm @ 30A, 10V | Surface Mount | 3V @ 250µA | 46 nC @ 10 V | 30 V | ±16V | 900 pF @ 15 V | - | - | TO-252 (DPAK) | - | 45W (Tc) | -55°C ~ 150°C (TJ) |