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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQD16N15TM

FQD16N15TM

MOSFET N-CH 150V 11.8A DPAK

Fairchild Semiconductor

1,947 -
FQD16N15TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11.8A (Tc) 10V 160mOhm @ 5.9A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 150 V ±25V 910 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
FQP2NA90

FQP2NA90

MOSFET N-CH 900V 2.8A TO220-3

Fairchild Semiconductor

1,789 -
FQP2NA90

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 5.8Ohm @ 1.4A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 900 V ±30V 680 pF @ 25 V - - TO-220-3 - 107W (Tc) -55°C ~ 150°C (TJ)
FDP5N50

FDP5N50

MOSFET N-CH 500V 5A TO220-3

Fairchild Semiconductor

1,761 -
FDP5N50

数据表

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 500 V ±30V 640 pF @ 25 V - - TO-220-3 - 85W (Tc) -55°C ~ 150°C (TJ)
FDPF12N35

FDPF12N35

MOSFET N-CH 350V 12A TO220F

Fairchild Semiconductor

1,458 -
FDPF12N35

数据表

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 380mOhm @ 6A, 10V Through Hole 5V @ 250µA 25 nC @ 10 V 350 V ±30V 1110 pF @ 25 V - - TO-220F-3 - 31.3W (Tc) -55°C ~ 150°C (TJ)
FQPF19N10L

FQPF19N10L

MOSFET N-CH 100V 13.6A TO220F

Fairchild Semiconductor

1,448 -
FQPF19N10L

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 13.6A (Tc) 5V, 10V 100mOhm @ 6.8A, 10V Through Hole 2V @ 250µA 18 nC @ 5 V 100 V ±20V 870 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 175°C (TJ)
FQD3N60TF

FQD3N60TF

MOSFET N-CH 600V 2.4A DPAK

Fairchild Semiconductor

1,338 -
FQD3N60TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V Surface Mount 5V @ 250µA 13 nC @ 10 V 600 V ±30V 450 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FDMS8025S

FDMS8025S

MOSFET N-CH 30V 24A/49A 8PQFN

Fairchild Semiconductor

89,079 -
FDMS8025S

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 49A (Tc) 4.5V, 10V 2.8mOhm @ 24A, 10V Surface Mount 3V @ 1mA 47 nC @ 10 V 30 V ±20V 3000 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
HUF76129D3S

HUF76129D3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

17,523 -
HUF76129D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V Surface Mount 3V @ 250µA 46 nC @ 10 V 30 V ±20V 1425 pF @ 25 V - - TO-252 (DPAK) - 105W (Tc) -55°C ~ 150°C (TJ)
IRF830B

IRF830B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9,803 -
IRF830B

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.5Ohm @ 2.25A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 500 V ±30V 1050 pF @ 25 V - - TO-220 - 73W (Tc) -55°C ~ 150°C (TJ)
FDD3570

FDD3570

MOSFET N-CH 80V 10A TO252

Fairchild Semiconductor

5,144 -
FDD3570

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 6V, 10V 20mOhm @ 10A, 10V Surface Mount 4V @ 250µA 76 nC @ 10 V 80 V ±20V 2800 pF @ 40 V - - TO-252 (DPAK) - 3.4W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
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