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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQPF12P10

FQPF12P10

MOSFET P-CH 100V 8.2A TO220F

Fairchild Semiconductor

96,000 -
FQPF12P10

数据表

QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 8.2A (Tc) 10V 290mOhm @ 4.1A, 10V Through Hole 4V @ 250µA 27 nC @ 10 V 100 V ±30V 800 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 175°C (TJ)
FQPF30N06

FQPF30N06

MOSFET N-CH 60V 21A TO220F

Fairchild Semiconductor

80,000 -
FQPF30N06

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 40mOhm @ 10.5A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 60 V ±25V 945 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 175°C (TJ)
FDP6030L

FDP6030L

MOSFET N-CH 30V 48A TO220-3

Fairchild Semiconductor

60,736 -
FDP6030L

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Ta) 4.5V, 10V 13mOhm @ 26A, 10V Through Hole 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1250 pF @ 15 V - - TO-220-3 - 52W (Tc) -65°C ~ 175°C (TJ)
FDS7082N3

FDS7082N3

MOSFET N-CH 30V 17.5A 8SO

Fairchild Semiconductor

13,304 -
FDS7082N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 17.5A (Ta) 4.5V, 10V 6mOhm @ 17.5A, 10V Surface Mount 3V @ 250µA 53 nC @ 10 V 30 V ±20V 2271 pF @ 15 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
HUF76009P3

HUF76009P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,513 -
HUF76009P3

数据表

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 5V, 10V 27mOhm @ 20A, 10V Through Hole 3V @ 250µA 13 nC @ 10 V 20 V ±20V 470 pF @ 20 V - - TO-220AB - 41W (Tc) -55°C ~ 150°C (TJ)
FDU6296

FDU6296

MOSFET N-CH 30V 15A/50A IPAK

Fairchild Semiconductor

7,413 -
FDU6296

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V Through Hole 3V @ 250µA 31.5 nC @ 10 V 30 V ±20V 1440 pF @ 15 V - - IPAK - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ)
SI4410DY

SI4410DY

MOSFET N-CH 30V 10A 8SOIC

Fairchild Semiconductor

2,984 -
SI4410DY

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 1V @ 250µA 60 nC @ 10 V 30 V ±20V 1350 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQU3N40TU

FQU3N40TU

MOSFET N-CH 400V 2A IPAK

Fairchild Semiconductor

2,887 -
FQU3N40TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 3.4Ohm @ 1A, 10V Through Hole 5V @ 250µA 7.5 nC @ 10 V 400 V ±30V 230 pF @ 25 V - - IPAK - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
FQI5N30TU

FQI5N30TU

MOSFET N-CH 300V 5.4A I2PAK

Fairchild Semiconductor

2,849 -
FQI5N30TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 300 V ±30V 430 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ)
FQPF5N50

FQPF5N50

MOSFET N-CH 500V 3A TO220F

Fairchild Semiconductor

1,999 -
FQPF5N50

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.8Ohm @ 1.5A, 10V Through Hole 5V @ 250µA 17 nC @ 10 V 500 V ±30V 610 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
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