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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMS8570S

FDMS8570S

28A, 25V, 0.0028OHM, N-CHANNEL,

Fairchild Semiconductor

6,262 -
FDMS8570S

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 60A (Tc) 4.5V, 10V 2.8mOhm @ 24A, 10V Surface Mount 2.2V @ 1mA 425 nC @ 10 V 25 V ±12V 2825 pF @ 13 V - - 8-PQFN (5x6) - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
FDS7098N3

FDS7098N3

MOSFET N-CH 30V 14A 8SO

Fairchild Semiconductor

5,328 -
FDS7098N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V Surface Mount 3V @ 250µA 22 nC @ 5 V 30 V ±20V 1587 pF @ 15 V - - 8-SO - 3W (Ta) -55°C ~ 150°C (TJ)
FDC699P

FDC699P

MOSFET P-CH 20V 7A SUPERSOT6

Fairchild Semiconductor

4,762 -
FDC699P

数据表

PowerTrench® 6-SSOT Flat-lead, SuperSOT™-6 FLMP Bulk Obsolete P-Channel MOSFET (Metal Oxide) 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V Surface Mount 1.5V @ 250µA 38 nC @ 5 V 20 V ±12V 2640 pF @ 10 V - - SuperSOT™-6 FLMP - 2W (Ta) -55°C ~ 150°C (TJ)
FQI2N90TU

FQI2N90TU

MOSFET N-CH 900V 2.2A I2PAK

Fairchild Semiconductor

2,930 -
FQI2N90TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 7.2Ohm @ 1.1A, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 900 V ±30V 500 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ)
NDB4060

NDB4060

MOSFET N-CH 60V 15A D2PAK

Fairchild Semiconductor

2,827 -
NDB4060

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 100mOhm @ 7.5A, 10V Surface Mount 4V @ 250µA 17 nC @ 10 V 60 V ±20V 450 pF @ 25 V - - TO-263 (D2PAK) - 50W (Tc) -65°C ~ 175°C (TJ)
HUF76419D3STR4921

HUF76419D3STR4921

20A, 60V, 0.043OHM, N CHANNEL ,

Fairchild Semiconductor

2,175 -
HUF76419D3STR4921

数据表

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V Surface Mount 3V @ 250µA 27.5 nC @ 10 V 60 V ±16V 900 pF @ 25 V - - TO-252 (DPAK) - 75W (Tc) -55°C ~ 175°C (TJ)
FQPF14N15

FQPF14N15

MOSFET N-CH 150V 9.8A TO220F

Fairchild Semiconductor

1,856 -
FQPF14N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.8A (Tc) 10V 210mOhm @ 4.9A, 10V Through Hole 4V @ 250µA 23 nC @ 10 V 150 V ±25V 715 pF @ 25 V - - TO-220F-3 - 48W (Tc) -55°C ~ 175°C (TJ)
FQI17N08TU

FQI17N08TU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor

1,354 -
FQI17N08TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 16.5A (Tc) 10V 115mOhm @ 8.25A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 80 V ±25V 450 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 65W (Tc) -55°C ~ 150°C (TJ)
SFR9110TF

SFR9110TF

MOSFET P-CH 100V 2.8A DPAK

Fairchild Semiconductor

122,386 -
SFR9110TF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 1.2Ohm @ 1.4A, 10V Surface Mount 4V @ 250µA 10 nC @ 10 V 100 V ±30V 335 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 20W (Tc) -55°C ~ 150°C (TJ)
RFD4N06LSM9A

RFD4N06LSM9A

MOSFET N-CH 60V 4A TO252AA

Fairchild Semiconductor

67,132 -
RFD4N06LSM9A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 5V 600mOhm @ 1A, 5V Surface Mount 2.5V @ 250µA 8 nC @ 10 V 60 V ±10V - - - TO-252 (DPAK) - 30W (Tc) -55°C ~ 175°C (TJ)
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