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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SFM9014TF

SFM9014TF

MOSFET P-CH 60V 1.8A SOT223-4

Fairchild Semiconductor

2,900 -
SFM9014TF

数据表

- TO-261-4, TO-261AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 1.8A (Ta) 10V 500mOhm @ 900mA, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 60 V ±30V 350 pF @ 25 V - - SOT-223-4 - 2.8W (Ta) -55°C ~ 150°C (TJ)
FDZ206P

FDZ206P

MOSFET P-CH 20V 13A 30BGA

Fairchild Semiconductor

361,579 -
FDZ206P

数据表

PowerTrench® 30-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 13A (Ta) 2.5V, 4.5V 9.5mOhm @ 13A, 4.5V Surface Mount 1.5V @ 250µA 53 nC @ 4.5 V 20 V ±12V 4280 pF @ 10 V - - 30-BGA (4x3.5) - 2.2W (Ta) -55°C ~ 150°C (TJ)
FQD7N10TM

FQD7N10TM

MOSFET N-CH 100V 5.8A DPAK

Fairchild Semiconductor

173,355 -
FQD7N10TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.8A (Tc) 10V 350mOhm @ 2.9A, 10V Surface Mount 4V @ 250µA 7.5 nC @ 10 V 100 V ±25V 250 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
FDJ127P

FDJ127P

MOSFET P-CH 20V 4.1A SC75-6 FLMP

Fairchild Semiconductor

42,459 -
FDJ127P

数据表

PowerTrench® SC-75-6 FLMP Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.1A (Ta) 1.8V, 4.5V 60mOhm @ 4.1A, 4.5V Surface Mount 1.5V @ 250µA 10 nC @ 4.5 V 20 V ±8V 780 pF @ 10 V - - SC75-6 FLMP - 1.6W (Ta) -55°C ~ 150°C (TJ)
FQD5N50TF

FQD5N50TF

MOSFET N-CH 500V 3.5A DPAK

Fairchild Semiconductor

28,688 -
FQD5N50TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 1.8Ohm @ 1.75A, 10V Surface Mount 5V @ 250µA 17 nC @ 10 V 500 V ±30V 610 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FQU3N60TU

FQU3N60TU

MOSFET N-CH 600V 2.4A IPAK

Fairchild Semiconductor

21,754 -
FQU3N60TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 600 V ±30V 450 pF @ 25 V - - IPAK - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
HUF76113T3ST

HUF76113T3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

19,318 -
HUF76113T3ST

数据表

- TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 4.7A (Ta) 4.5V, 10V 31mOhm @ 4.7A, 10V Surface Mount 3V @ 250µA 20.5 nC @ 10 V 30 V ±20V 625 pF @ 25 V - - SOT-223-4 - 1.1W (Ta) -55°C ~ 150°C (TJ)
FQD5N50CTM

FQD5N50CTM

MOSFET N-CH 500V 4A DPAK

Fairchild Semiconductor

8,578 -
FQD5N50CTM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.4Ohm @ 2A, 10V Surface Mount 4V @ 250µA 24 nC @ 10 V 500 V ±30V 625 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
FQD2N60TF

FQD2N60TF

MOSFET N-CH 600V 2A DPAK

Fairchild Semiconductor

7,387 -
FQD2N60TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.7Ohm @ 1A, 10V Surface Mount 5V @ 250µA 11 nC @ 10 V 600 V ±30V 350 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FQU6N25TU

FQU6N25TU

MOSFET N-CH 250V 4.4A IPAK

Fairchild Semiconductor

6,803 -
FQU6N25TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1Ohm @ 2.2A, 10V Through Hole 5V @ 250µA 8.5 nC @ 10 V 250 V ±30V 300 pF @ 25 V - - IPAK - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
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