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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDD6780A

FDD6780A

16.4A, 25V, 0.0086OHM, N-CHANNEL

Fairchild Semiconductor

26,410 -
FDD6780A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 16.4A (Ta), 30A (Tc) 4.5V, 10V 8.6mOhm @ 16.4A, 10V Surface Mount 3V @ 250µA 24 nC @ 10 V 25 V ±20V 1235 pF @ 13 V - - TO-252 (DPAK) - 3.7W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ)
FDS9400A

FDS9400A

MOSFET P-CH 30V 3.4A 8SOIC

Fairchild Semiconductor

26,104 -
FDS9400A

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 4.5V, 10V 130mOhm @ 1A, 10V Surface Mount 3V @ 250µA 3.5 nC @ 5 V 30 V ±25V 205 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
FDB8876

FDB8876

MOSFET N-CH 30V 71A TO263AB

Fairchild Semiconductor

7,486 -
FDB8876

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 10V Surface Mount 2.5V @ 250µA 45 nC @ 10 V 30 V ±20V 1700 pF @ 15 V - - TO-263 (D2PAK) - 70W (Tc) -55°C ~ 175°C (TJ)
HUF75623P3

HUF75623P3

MOSFET N-CH 100V 22A TO220-3

Fairchild Semiconductor

4,436 -
HUF75623P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 64mOhm @ 22A, 10V Through Hole 4V @ 250µA 52 nC @ 20 V 100 V ±20V 790 pF @ 25 V - - TO-220-3 - 85W (Tc) -55°C ~ 175°C (TJ)
SFM9110TF

SFM9110TF

MOSFET P-CH 100V 1A SOT223-4

Fairchild Semiconductor

1,220 -
SFM9110TF

数据表

- TO-261-4, TO-261AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 1A (Ta) 10V 1.2Ohm @ 500mA, 10V Surface Mount 4V @ 250µA 10 nC @ 10 V 100 V ±30V 335 pF @ 25 V - - SOT-223-4 - 2.52W (Ta) -55°C ~ 150°C (TJ)
FDB6030L

FDB6030L

MOSFET N-CH 30V 48A TO263AB

Fairchild Semiconductor

22,487 -
FDB6030L

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 48A (Ta) 4.5V, 10V 13mOhm @ 26A, 10V Surface Mount 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1250 pF @ 15 V - - TO-263 (D2PAK) - 52W (Tc) -65°C ~ 175°C (TJ)
FDFS2P753AZ

FDFS2P753AZ

MOSFET P-CH 30V 3A 8SOIC

Fairchild Semiconductor

7,500 -
FDFS2P753AZ

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 115mOhm @ 3A, 10V Surface Mount 3V @ 250µA 11 nC @ 10 V 30 V ±25V 455 pF @ 15 V - Schottky Diode (Isolated) 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
HUF76131SK8T

HUF76131SK8T

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,367 -
HUF76131SK8T

数据表

UltraFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 13mOhm @ 10A, 10V Surface Mount 1V @ 250µA 47 nC @ 10 V 30 V ±20V 1605 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
HUF75829D3

HUF75829D3

MOSFET N-CH 150V 18A IPAK

Fairchild Semiconductor

4,067 -
HUF75829D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 110mOhm @ 18A, 10V Through Hole 4V @ 250µA 70 nC @ 20 V 150 V ±20V 1080 pF @ 25 V - - IPAK - 110W (Tc) -55°C ~ 175°C (TJ)
HUF76437S3S

HUF76437S3S

MOSFET N-CH 60V 71A D2PAK

Fairchild Semiconductor

3,205 -
HUF76437S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
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