Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 36

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HUF76121S3ST N-CHANNEL POWER MOSFET Fairchild Semiconductor	4,000	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	4.5V, 10V	21mOhm @ 47A, 10V	Surface Mount	3V @ 250µA	30 nC @ 10 V	30 V	±20V	850 pF @ 25 V	-	-	TO-263 (D2PAK)	-	75W (Tc)	-40°C ~ 150°C (TJ)
HUF76413D3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	3,600	-	询价单	数据表	UltraFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	49mOhm @ 20A, 10V	Through Hole	3V @ 250µA	20 nC @ 10 V	60 V	±16V	645 pF @ 25 V	-	-	IPAK	-	60W (Tc)	-55°C ~ 175°C (TJ)
FQU4N25TU MOSFET N-CH 250V 3A IPAK Fairchild Semiconductor	3,247	-	询价单	数据表	QFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	1.75Ohm @ 1.5A, 10V	Through Hole	5V @ 250µA	5.6 nC @ 10 V	250 V	±30V	200 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 37W (Tc)	-55°C ~ 150°C (TJ)
IRFS640A N-CHANNEL POWER MOSFET Fairchild Semiconductor	2,576	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9.8A (Tc)	10V	180mOhm @ 4.9A, 10V	Through Hole	4V @ 250µA	58 nC @ 10 V	200 V	±30V	1500 pF @ 25 V	-	-	TO-220F	-	43W (Tc)	-55°C ~ 150°C (TJ)
FDMS5361L-F085 FDMS5361 - N-CHANNEL POWERTRENCH Fairchild Semiconductor	2,390	-	询价单	数据表	PowerTrench®	8-PowerVDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	15mOhm @ 16.5A, 10V	Surface Mount	3V @ 250µA	44 nC @ 10 V	60 V	±20V	1980 pF @ 25 V	AEC-Q101	-	Power56	Automotive	75W (Tc)	-55°C ~ 175°C (TJ)
FQPF3N60 MOSFET N-CH 600V 2A TO220F Fairchild Semiconductor	2,360	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	3.6Ohm @ 1A, 10V	Through Hole	5V @ 250µA	13 nC @ 10 V	600 V	±30V	450 pF @ 25 V	-	-	TO-220F-3	-	34W (Tc)	-55°C ~ 150°C (TJ)
HUF76139S3ST N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,950	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	7.5mOhm @ 75A, 10V	Surface Mount	3V @ 250µA	78 nC @ 10 V	30 V	±20V	2700 pF @ 25 V	-	-	TO-263AB	-	165W (Tc)	-40°C ~ 150°C (TJ)
FQB5N40TM MOSFET N-CH 400V 4.5A D2PAK Fairchild Semiconductor	1,425	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.6Ohm @ 2.25A, 10V	Surface Mount	5V @ 250µA	13 nC @ 10 V	400 V	±30V	460 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 70W (Tc)	-55°C ~ 150°C (TJ)
FQI3N30TU MOSFET N-CH 300V 3.2A I2PAK Fairchild Semiconductor	1,146	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.2A (Tc)	10V	2.2Ohm @ 1.6A, 10V	Through Hole	5V @ 250µA	7 nC @ 10 V	300 V	±30V	230 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)
NDP4060 MOSFET N-CH 60V 15A TO220-3 Fairchild Semiconductor	86,239	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	100mOhm @ 7.5A, 10V	Through Hole	4V @ 250µA	17 nC @ 10 V	60 V	±20V	450 pF @ 25 V	-	-	TO-220-3	-	50W (Tc)	-65°C ~ 175°C (TJ)

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