富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQPF9N25CRDTU

FQPF9N25CRDTU

8.8A, 250V, N-CHANNEL, MOSFET

Fairchild Semiconductor

42,981 -
FQPF9N25CRDTU

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HUFA75623S3ST

HUFA75623S3ST

MOSFET N-CH 100V 22A D2PAK

Fairchild Semiconductor

32,730 -
HUFA75623S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 64mOhm @ 22A, 10V Surface Mount 4V @ 250µA 52 nC @ 20 V 100 V ±20V 790 pF @ 25 V - - TO-263 (D2PAK) - 85W (Tc) -55°C ~ 175°C (TJ)
HUF76409D3

HUF76409D3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,600 -
HUF76409D3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V Through Hole 3V @ 250µA 15 nC @ 10 V 60 V ±16V 485 pF @ 25 V - - IPAK - 49W (Tc) -55°C ~ 175°C (TJ)
HUFA76432S3ST

HUFA76432S3ST

MOSFET N-CH 60V 59A D2PAK

Fairchild Semiconductor

2,829 -
HUFA76432S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V Surface Mount 3V @ 250µA 53 nC @ 10 V 60 V ±16V 1765 pF @ 25 V - - TO-263 (D2PAK) - 130W (Tc) -55°C ~ 175°C (TJ)
FQU2N90TU

FQU2N90TU

MOSFET N-CH 900V 1.7A IPAK

Fairchild Semiconductor

223,140 -
FQU2N90TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 900 V ±30V 500 pF @ 25 V - - IPAK - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FDMS0352S

FDMS0352S

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

182,000 -
FDMS0352S

数据表

PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 42A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V Surface Mount 3V @ 1mA 90 nC @ 10 V 30 V ±20V 6120 pF @ 15 V - - 8-PQFN (5x6), Power56 - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
FDD6035AL

FDD6035AL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

152,926 -
FDD6035AL

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 12A, 10V Surface Mount 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1230 pF @ 15 V - - TO-252 (DPAK) - 1.5W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
FDS6680S

FDS6680S

MOSFET N-CH 30V 11.5A 8SOIC

Fairchild Semiconductor

30,138 -
FDS6680S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 4.5V, 10V 11mOhm @ 11.5A, 10V Surface Mount 3V @ 250µA 24 nC @ 5 V 30 V ±20V 2010 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDP8880

FDP8880

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

28,800 -
FDP8880

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 11A (Ta), 54A (Tc) 4.5V, 10V 11.6mOhm @ 40A, 10V Through Hole 2.5V @ 250µA 29 nC @ 10 V 30 V ±20V 1240 pF @ 15 V - - TO-220-3 - 55W (Tc) -55°C ~ 175°C (TJ)
HUF76409D3ST

HUF76409D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

26,462 -
HUF76409D3ST

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V Surface Mount 3V @ 250µA 15 nC @ 10 V 60 V ±16V 485 pF @ 25 V - - TO-252 (DPAK) - 49W (Tc) -55°C ~ 175°C (TJ)
共 1251 条记录«上一页1... 3334353637383940...126下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户