| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQPF9N25CRDTU8.8A, 250V, N-CHANNEL, MOSFET Fairchild Semiconductor |
42,981 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
HUFA75623S3STMOSFET N-CH 100V 22A D2PAK Fairchild Semiconductor |
32,730 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 64mOhm @ 22A, 10V | Surface Mount | 4V @ 250µA | 52 nC @ 20 V | 100 V | ±20V | 790 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 85W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF76409D3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,600 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | Through Hole | 3V @ 250µA | 15 nC @ 10 V | 60 V | ±16V | 485 pF @ 25 V | - | - | IPAK | - | 49W (Tc) | -55°C ~ 175°C (TJ) |
|
HUFA76432S3STMOSFET N-CH 60V 59A D2PAK Fairchild Semiconductor |
2,829 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 59A (Tc) | 4.5V, 10V | 17mOhm @ 59A, 10V | Surface Mount | 3V @ 250µA | 53 nC @ 10 V | 60 V | ±16V | 1765 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
|
FQU2N90TUMOSFET N-CH 900V 1.7A IPAK Fairchild Semiconductor |
223,140 | - |
|
数据表 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 7.2Ohm @ 850mA, 10V | Through Hole | 5V @ 250µA | 15 nC @ 10 V | 900 V | ±30V | 500 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
FDMS0352SPOWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
182,000 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 42A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | Surface Mount | 3V @ 1mA | 90 nC @ 10 V | 30 V | ±20V | 6120 pF @ 15 V | - | - | 8-PQFN (5x6), Power56 | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) |
|
FDD6035ALN-CHANNEL POWER MOSFET Fairchild Semiconductor |
152,926 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Ta), 46A (Tc) | 4.5V, 10V | 12mOhm @ 12A, 10V | Surface Mount | 3V @ 250µA | 18 nC @ 5 V | 30 V | ±20V | 1230 pF @ 15 V | - | - | TO-252 (DPAK) | - | 1.5W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) |
|
FDS6680SMOSFET N-CH 30V 11.5A 8SOIC Fairchild Semiconductor |
30,138 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.5A (Ta) | 4.5V, 10V | 11mOhm @ 11.5A, 10V | Surface Mount | 3V @ 250µA | 24 nC @ 5 V | 30 V | ±20V | 2010 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FDP8880POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
28,800 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Ta), 54A (Tc) | 4.5V, 10V | 11.6mOhm @ 40A, 10V | Through Hole | 2.5V @ 250µA | 29 nC @ 10 V | 30 V | ±20V | 1240 pF @ 15 V | - | - | TO-220-3 | - | 55W (Tc) | -55°C ~ 175°C (TJ) |
|
HUF76409D3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
26,462 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | Surface Mount | 3V @ 250µA | 15 nC @ 10 V | 60 V | ±16V | 485 pF @ 25 V | - | - | TO-252 (DPAK) | - | 49W (Tc) | -55°C ~ 175°C (TJ) |