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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDS4488

FDS4488

0.0079A, 30V, N-CHANNEL MOSFET

Fairchild Semiconductor

117,757 -
FDS4488

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 7.9A (Ta) 4.5V, 10V 22mOhm @ 7.9A, 10V Surface Mount 3V @ 250µA 13 nC @ 5 V 30 V ±25V 927 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 175°C (TJ)
FDMS8692

FDMS8692

MOSFET N-CH 30V 12A/28A 8PQFN

Fairchild Semiconductor

62,002 -
FDMS8692

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 28A (Tc) 4.5V, 10V 9mOhm @ 12A, 10V Surface Mount 3V @ 250µA 21 nC @ 10 V 30 V ±20V 1265 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
FDT461N

FDT461N

MOSFET N-CH 100V 540MA SOT223-4

Fairchild Semiconductor

47,000 -
FDT461N

数据表

PowerTrench® TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 540mA (Ta) 4.5V, 10V 2Ohm @ 540mA, 10V Surface Mount 2V @ 250µA 4 nC @ 10 V 100 V ±20V 74 pF @ 25 V - - SOT-223-4 - 1.13W (Ta) -55°C ~ 150°C (TJ)
HUFA76407D3ST

HUFA76407D3ST

MOSFET N-CH 60V 12A TO252AA

Fairchild Semiconductor

33,519 -
HUFA76407D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V Surface Mount 3V @ 250µA 11.3 nC @ 10 V 60 V ±16V 350 pF @ 25 V - - TO-252 (DPAK) - 38W (Tc) -55°C ~ 175°C (TJ)
FQD8N25TF

FQD8N25TF

MOSFET N-CH 250V 6.2A DPAK

Fairchild Semiconductor

33,444 -
FQD8N25TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 550mOhm @ 3.1A, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 250 V ±30V 530 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FDS6694

FDS6694

MOSFET N-CH 30V 12A 8SOIC

Fairchild Semiconductor

28,954 -
FDS6694

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V Surface Mount 3V @ 250µA 19 nC @ 5 V 30 V ±20V 1293 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
HUF76139S3STK

HUF76139S3STK

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

24,000 -
HUF76139S3STK

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V Surface Mount 3V @ 250µA 78 nC @ 10 V 30 V ±20V 2700 pF @ 25 V - - TO-263AB - 165W (Tc) -40°C ~ 150°C (TJ)
FQU10N20TU

FQU10N20TU

MOSFET N-CH 200V 7.6A IPAK

Fairchild Semiconductor

21,774 -
FQU10N20TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.6A (Tc) 10V 360mOhm @ 3.8A, 10V Through Hole 5V @ 250µA 18 nC @ 10 V 200 V ±30V 670 pF @ 25 V - - IPAK - 2.5W (Ta), 51W (Tc) -55°C ~ 150°C (TJ)
HUF76633S3ST

HUF76633S3ST

MOSFET N-CH 100V 39A D2PAK

Fairchild Semiconductor

12,500 -
HUF76633S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V Surface Mount 3V @ 250µA 67 nC @ 10 V 100 V ±16V 1820 pF @ 25 V - - TO-263 (D2PAK) - 145W (Tc) -55°C ~ 175°C (TJ)
IRFS634B_FP001

IRFS634B_FP001

MOSFET N-CH 250V 8.1A TO220F

Fairchild Semiconductor

6,000 -
IRFS634B_FP001

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.1A (Tc) 10V 450mOhm @ 4.05A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 250 V ±30V 1000 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 150°C (TJ)
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