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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SSI4N60BTU

SSI4N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

50,126 -
SSI4N60BTU

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 2A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 600 V ±30V 920 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ)
IRFR430BTF

IRFR430BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

49,950 -
IRFR430BTF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V Surface Mount 4V @ 250µA 33 nC @ 10 V 500 V ±30V 1050 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta) -55°C ~ 150°C (TJ)
HUFA75332S3ST

HUFA75332S3ST

MOSFET N-CH 55V 60A D2PAK

Fairchild Semiconductor

44,255 -
HUFA75332S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 19mOhm @ 60A, 10V Surface Mount 4V @ 250µA 85 nC @ 20 V 55 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 145W (Tc) -55°C ~ 175°C (TJ)
FQP5N50C

FQP5N50C

MOSFET N-CH 500V 5A TO220-3

Fairchild Semiconductor

35,032 -
FQP5N50C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 500 V ±30V 625 pF @ 25 V - - TO-220-3 - 73W (Tc) -55°C ~ 150°C (TJ)
FDU8778

FDU8778

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor

10,605 -
FDU8778

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 14mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 18 nC @ 10 V 25 V ±20V 845 pF @ 13 V - - IPAK - 39W (Tc) -55°C ~ 175°C (TJ)
FDT459N

FDT459N

6.5A, 30V, 0.035OHM, N-CHANNEL,

Fairchild Semiconductor

7,840 -
FDT459N

数据表

- TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4.5V, 10V 35mOhm @ 6.5A, 10V Surface Mount 2V @ 250µA 17 nC @ 10 V 30 V ±20V 365 pF @ 15 V - - SOT-223-4 - 3W (Ta) -55°C ~ 150°C (TJ)
IRFW840BTM

IRFW840BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,466 -
IRFW840BTM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 800mOhm @ 4A, 10V Surface Mount 4V @ 250µA 53 nC @ 10 V 500 V ±30V 1800 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 134W (Tc) -55°C ~ 150°C (TJ)
SFR9024TF

SFR9024TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,750 -
SFR9024TF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 7.8A (Tc) 10V 280mOhm @ 3.9A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 60 V ±30V 600 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ)
FDU8880

FDU8880

MOSFET N-CH 30V 13A/58A IPAK

Fairchild Semiconductor

260,800 -
FDU8880

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 58A (Tc) 4.5V, 10V 10mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 31 nC @ 10 V 30 V ±20V 1260 pF @ 15 V - - IPAK - 55W (Tc) -55°C ~ 175°C (TJ)
FDJ129P

FDJ129P

MOSFET P-CH 20V 4.2A SC75-6 FLMP

Fairchild Semiconductor

242,889 -
FDJ129P

数据表

PowerTrench® SC-75-6 FLMP Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.2A (Ta) 2.5V, 4.5V 70mOhm @ 4.2A, 4.5V Surface Mount 1.5V @ 250µA 6 nC @ 4.5 V 20 V ±12V 780 pF @ 10 V - - SC75-6 FLMP - 1.6W (Ta) -55°C ~ 150°C (TJ)
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