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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDB7030BL60A, 30V, 0.009OHM, N-CHANNEL, Fairchild Semiconductor |
51,983 | - |
|
数据表 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Ta) | 4.5V, 10V | 9mOhm @ 30A, 10V | Surface Mount | 3V @ 250µA | 24 nC @ 5 V | 30 V | ±20V | 1760 pF @ 15 V | - | - | TO-263AB | - | 60W (Tc) | -65°C ~ 175°C (TJ) |
|
FQP13N06LPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
46,409 | - |
|
数据表 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13.6A (Tc) | 5V, 10V | 110mOhm @ 6.8A, 10V | Through Hole | 2.5V @ 250µA | 6.4 nC @ 5 V | 60 V | ±20V | 350 pF @ 25 V | - | - | TO-220-3 | - | 45W (Tc) | -55°C ~ 175°C (TJ) |
|
FDFS2P103MOSFET P-CH 30V 5.3A 8SOIC Fairchild Semiconductor |
29,870 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 4.5V, 10V | 59mOhm @ 5.3A, 10V | Surface Mount | 3V @ 250µA | 8 nC @ 5 V | 30 V | ±25V | 528 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SOIC | - | 900mW (Ta) | -55°C ~ 150°C (TJ) |
|
IRFI840BTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
26,732 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | Through Hole | 4V @ 250µA | 53 nC @ 10 V | 500 V | ±30V | 1800 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FDFS2P102MOSFET P-CH 20V 3.3A 8SOIC Fairchild Semiconductor |
14,802 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.3A (Ta) | 4.5V, 10V | 125mOhm @ 3.3A, 10V | Surface Mount | 2V @ 250µA | 10 nC @ 10 V | 20 V | ±20V | 270 pF @ 10 V | - | Schottky Diode (Isolated) | 8-SOIC | - | 900mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
FDFS2P103AMOSFET P-CH 30V 5.3A 8SOIC Fairchild Semiconductor |
11,013 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 4.5V, 10V | 59mOhm @ 5.3A, 10V | Surface Mount | 3V @ 250µA | 8 nC @ 5 V | 30 V | ±25V | 535 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SOIC | - | 900mW (Ta) | -55°C ~ 150°C (TJ) |
|
FQP17N08LMOSFET N-CH 80V 16.5A TO220-3 Fairchild Semiconductor |
2,957 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.5A (Tc) | 5V, 10V | 100mOhm @ 8.25A, 10V | Through Hole | 2V @ 250µA | 11.5 nC @ 5 V | 80 V | ±20V | 520 pF @ 25 V | - | - | TO-220-3 | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
|
SI6463DQP-CHANNEL MOSFET Fairchild Semiconductor |
2,350 | - |
|
数据表 |
PowerTrench® | 8-TSSOP (0.173", 4.40mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 8.8A (Ta) | 2.5V, 4.5V | 12.5mOhm @ 8.8A, 4.5V | Surface Mount | 1.5V @ 250µA | 66 nC @ 4.5 V | 20 V | ±12V | 5045 pF @ 10 V | - | - | 8-TSSOP | - | 600mW (Ta) | -55°C ~ 150°C (TJ) |
|
SSW2N60BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,263 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | Surface Mount | 4V @ 250µA | 17 nC @ 10 V | 600 V | ±30V | 490 pF @ 25 V | - | - | D2PAK | - | 3.13W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF76121D3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,192 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 30 nC @ 10 V | 30 V | ±20V | 850 pF @ 25 V | - | - | TO-252 (DPAK) | - | 75W (Tc) | -55°C ~ 150°C (TJ) |
