Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 32

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FQB3N30TM MOSFET N-CH 300V 3.2A D2PAK Fairchild Semiconductor	2,934	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.2A (Tc)	10V	2.2Ohm @ 1.6A, 10V	Surface Mount	5V @ 250µA	7 nC @ 10 V	300 V	±30V	230 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)
FQP5N30 MOSFET N-CH 300V 5.4A TO220-3 Fairchild Semiconductor	2,635	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.4A (Tc)	10V	900mOhm @ 2.7A, 10V	Through Hole	5V @ 250µA	13 nC @ 10 V	300 V	±30V	430 pF @ 25 V	-	-	TO-220-3	-	70W (Tc)	-55°C ~ 150°C (TJ)
FQD4N50TF MOSFET N-CH 500V 2.6A DPAK Fairchild Semiconductor	2,257	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Tc)	10V	2.7Ohm @ 1.3A, 10V	Surface Mount	5V @ 250µA	13 nC @ 10 V	500 V	±30V	460 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)
FQI7P06TU MOSFET P-CH 60V 7A I2PAK Fairchild Semiconductor	2,199	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	410mOhm @ 3.5A, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	60 V	±25V	295 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.75W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
FDU8796 MOSFET N-CH 25V 35A IPAK Fairchild Semiconductor	1,800	-	询价单	数据表	PowerTrench®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	5.7mOhm @ 35A, 10V	Through Hole	2.5V @ 250µA	52 nC @ 10 V	25 V	±20V	2610 pF @ 13 V	-	-	IPAK	-	88W (Tc)	-55°C ~ 175°C (TJ)
FQPF3N40 MOSFET N-CH 400V 1.6A TO220F Fairchild Semiconductor	1,544	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.6A (Tc)	10V	3.4Ohm @ 800mA, 10V	Through Hole	5V @ 250µA	7.5 nC @ 10 V	400 V	±30V	230 pF @ 25 V	-	-	TO-220F-3	-	20W (Tc)	-55°C ~ 150°C (TJ)
HRFZ44N MOSFET N-CH 55V 49A TO220-3 Fairchild Semiconductor	12,586	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	22mOhm @ 25A, 10V	Through Hole	4V @ 250µA	75 nC @ 20 V	55 V	±20V	1060 pF @ 25 V	-	-	TO-220-3	-	120W (Tc)	-55°C ~ 175°C (TJ)
IRFS530A N-CHANNEL POWER MOSFET Fairchild Semiconductor	4,315	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	10.7A (Tc)	10V	110mOhm @ 5.35A, 10V	Through Hole	4V @ 250µA	36 nC @ 10 V	100 V	±20V	790 pF @ 25 V	-	-	TO-220F	-	32W (Tc)	-55°C ~ 175°C (TJ)
FDD6696 MOSFET N-CH 30V 13A/50A DPAK Fairchild Semiconductor	217,895	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 50A (Tc)	4.5V, 10V	8mOhm @ 13A, 10V	Surface Mount	3V @ 250µA	24 nC @ 5 V	30 V	±16V	1715 pF @ 15 V	-	-	TO-252 (DPAK)	-	3.8W (Ta), 52W (Tc)	-55°C ~ 175°C (TJ)
FQP9N25 N-CHANNEL POWER MOSFET Fairchild Semiconductor	132,000	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9.4A (Tc)	10V	420mOhm @ 4.7A, 10V	Through Hole	5V @ 250µA	20 nC @ 10 V	250 V	±30V	700 pF @ 25 V	-	-	TO-220	-	90W (Tc)	-55°C ~ 150°C (TJ)

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