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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF76121D3ST

HUF76121D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

59,388 -
HUF76121D3ST

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V Surface Mount 3V @ 250µA 30 nC @ 10 V 30 V ±20V 850 pF @ 25 V - - TO-252 (DPAK) - 75W (Tc) -55°C ~ 150°C (TJ)
IRFS630A

IRFS630A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

55,970 -
IRFS630A

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 400mOhm @ 3.25A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 200 V ±30V 650 pF @ 25 V - - TO-220F - 38W (Tc) -55°C ~ 150°C (TJ)
FQU20N06TU

FQU20N06TU

MOSFET N-CH 60V 16.8A IPAK

Fairchild Semiconductor

17,796 -
FQU20N06TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 16.8A (Tc) 10V 63mOhm @ 8.4A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 60 V ±25V 590 pF @ 25 V - - IPAK - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ)
HUF75309P3

HUF75309P3

MOSFET N-CH 55V 19A TO220-3

Fairchild Semiconductor

8,290 -
HUF75309P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 70mOhm @ 19A, 10V Through Hole 4V @ 250µA 24 nC @ 20 V 55 V ±20V 350 pF @ 25 V - - TO-220-3 - 55W (Tc) -55°C ~ 175°C (TJ)
HUF76423D3S

HUF76423D3S

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

7,686 -
HUF76423D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 32mOhm @ 20A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 60 V ±16V 1060 pF @ 25 V - - TO-252 (DPAK) - 85W (Tc) -55°C ~ 175°C (TJ)
FQI2N30TU

FQI2N30TU

MOSFET N-CH 300V 2.1A I2PAK

Fairchild Semiconductor

7,063 -
FQI2N30TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 3.7Ohm @ 1.05A, 10V Through Hole 5V @ 250µA 5 nC @ 10 V 300 V ±30V 130 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 40W (Tc) -55°C ~ 150°C (TJ)
HUF76423D3

HUF76423D3

MOSFET N-CH 60V 20A IPAK

Fairchild Semiconductor

6,794 -
HUF76423D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 32mOhm @ 20A, 10V Through Hole 3V @ 250µA 34 nC @ 10 V 60 V ±16V 1060 pF @ 25 V - - IPAK - 85W (Tc) -55°C ~ 175°C (TJ)
FQI5N15TU

FQI5N15TU

MOSFET N-CH 150V 5.4A I2PAK

Fairchild Semiconductor

5,717 -
FQI5N15TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 800mOhm @ 2.7A, 10V Through Hole 4V @ 250µA 7 nC @ 10 V 150 V ±25V 230 pF @ 25 V - - TO-262 (I2PAK) - 3.75W (Ta), 54W (Tc) -55°C ~ 175°C (TJ)
HUFA75329S3ST

HUFA75329S3ST

MOSFET N-CH 55V 49A D2PAK

Fairchild Semiconductor

3,596 -
HUFA75329S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 24mOhm @ 49A, 10V Surface Mount 4V @ 250µA 75 nC @ 20 V 55 V ±20V 1060 pF @ 25 V - - TO-263 (D2PAK) - 128W (Tc) -55°C ~ 175°C (TJ)
FQP2N50

FQP2N50

MOSFET N-CH 500V 2.1A TO220-3

Fairchild Semiconductor

3,015 -
FQP2N50

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 5.3Ohm @ 1.05A, 10V Through Hole 5V @ 250µA 8 nC @ 10 V 500 V ±30V 230 pF @ 25 V - - TO-220-3 - 55W (Tc) -55°C ~ 150°C (TJ)
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