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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF76121P3

HUF76121P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

26,402 -
HUF76121P3

数据表

UltraFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V Through Hole 3V @ 250µA 30 nC @ 10 V 30 V ±20V 850 pF @ 25 V - - TO-220AB - 75W (Tc) -40°C ~ 150°C (TJ)
RFP14N05L

RFP14N05L

MOSFET N-CH 50V 14A TO220-3

Fairchild Semiconductor

15,914 -
RFP14N05L

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 5V 100mOhm @ 14A, 5V Through Hole 2V @ 250µA 40 nC @ 10 V 50 V ±10V 670 pF @ 25 V - - TO-220-3 - 48W (Tc) -55°C ~ 175°C (TJ)
HUF76609D3

HUF76609D3

MOSFET N-CH 100V 10A IPAK

Fairchild Semiconductor

15,455 -
HUF76609D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V Through Hole 3V @ 250µA 16 nC @ 10 V 100 V ±16V 425 pF @ 25 V - - IPAK - 49W (Tc) -55°C ~ 175°C (TJ)
SFP9620

SFP9620

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

12,883 -
SFP9620

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 1.5Ohm @ 1.8A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 200 V ±30V 540 pF @ 25 V - - TO-220-3 - 38W (Tc) -55°C ~ 150°C (TJ)
HUF76107P3

HUF76107P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8,400 -
HUF76107P3

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V Through Hole 3V @ 250µA 10.3 nC @ 10 V 30 V ±16V 315 pF @ 25 V - - TO-220AB - 45W (Tc) -55°C ~ 175°C (TJ)
ISL9N318AD3ST

ISL9N318AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,500 -
ISL9N318AD3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V Surface Mount 3V @ 250µA 28 nC @ 10 V 30 V ±20V 900 pF @ 15 V - - TO-263AB - 55W (Ta) -55°C ~ 175°C (TJ)
SI4822DY

SI4822DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

5,209 -
SI4822DY

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 12.5A (Ta) 4.5V, 10V 9.5mOhm @ 12.5A, 10V Surface Mount 3V @ 250µA 33 nC @ 5 V 30 V ±20V 2180 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
HUFA76609D3ST

HUFA76609D3ST

MOSFET N-CH 100V 10A TO252AA

Fairchild Semiconductor

2,500 -
HUFA76609D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V Surface Mount 3V @ 250µA 16 nC @ 10 V 100 V ±16V 425 pF @ 25 V - - TO-252 (DPAK) - 49W (Tc) -55°C ~ 175°C (TJ)
FDD5N53TM

FDD5N53TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,970 -
FDD5N53TM

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.5Ohm @ 2A, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 530 V ±30V 640 pF @ 25 V - - TO-252 (DPAK) - 40W (Tc) -55°C ~ 150°C (TJ)
HUF75321D3S

HUF75321D3S

MOSFET N-CH 55V 20A TO252AA

Fairchild Semiconductor

1,733 -
HUF75321D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 36mOhm @ 20A, 10V Surface Mount 4V @ 250µA 44 nC @ 20 V 55 V ±20V 680 pF @ 25 V - - TO-252 (DPAK) - 93W (Tc) -55°C ~ 175°C (TJ)
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