Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 28

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
ISL9N310AD3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	3,028	-	询价单	数据表	UltraFET®	TO-251-3 Stub Leads, IPAK	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	10Ohm @ 35A, 10A	Through Hole	3V @ 250µA	48 nC @ 10 V	30 V	±20V	1800 pF @ 15 V	-	-	TO-251 (IPAK)	-	70W (Ta)	-55°C ~ 175°C (TJ)
FQI5P10TU MOSFET P-CH 100V 4.5A I2PAK Fairchild Semiconductor	3,000	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.05Ohm @ 2.25A, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	100 V	±30V	250 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.75W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)
FQI17N08LTU MOSFET N-CH 80V 16.5A I2PAK Fairchild Semiconductor	2,000	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	16.5A (Tc)	5V, 10V	100mOhm @ 8.25A, 10V	Through Hole	2V @ 250µA	11.5 nC @ 5 V	80 V	±20V	520 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.75W (Ta), 65W (Tc)	-55°C ~ 175°C (TJ)
FQD5N30TM MOSFET N-CH 300V 4.4A DPAK Fairchild Semiconductor	1,623	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.4A (Tc)	10V	900mOhm @ 2.2A, 10V	Surface Mount	5V @ 250µA	13 nC @ 10 V	300 V	±30V	430 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)
FQB20N06TM MOSFET N-CH 60V 20A D2PAK Fairchild Semiconductor	1,550	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	60mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	15 nC @ 10 V	60 V	±25V	590 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.75W (Ta), 53W (Tc)	-55°C ~ 175°C (TJ)
FQB3N40TM MOSFET N-CH 400V 2.5A D2PAK Fairchild Semiconductor	1,490	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3.4Ohm @ 1.25A, 10V	Surface Mount	5V @ 250µA	7.5 nC @ 10 V	400 V	±30V	230 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)
FQPF2P25 MOSFET P-CH 250V 1.8A TO220F Fairchild Semiconductor	1,391	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.8A (Tc)	10V	4Ohm @ 900mA, 10V	Through Hole	5V @ 250µA	8.5 nC @ 10 V	250 V	±30V	250 pF @ 25 V	-	-	TO-220F-3	-	32W (Tc)	-55°C ~ 150°C (TJ)
FQP3N50C N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,362	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	2.5Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	13 nC @ 10 V	500 V	±30V	365 pF @ 25 V	-	-	TO-220-3	-	62W (Tc)	-55°C ~ 150°C (TJ)
FQI10N20CTU MOSFET N-CH 200V 9.5A I2PAK Fairchild Semiconductor	1,055	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.5A (Tc)	10V	360mOhm @ 4.75A, 10V	Through Hole	4V @ 250µA	26 nC @ 10 V	200 V	±30V	510 pF @ 25 V	-	-	TO-262 (I2PAK)	-	72W (Tc)	-55°C ~ 150°C (TJ)
HUFA75321D3ST N-CHANNEL ULTRAFET 55V, 20A, 36 Fairchild Semiconductor	78,075	-	询价单	数据表	UltraFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	36mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	44 nC @ 20 V	55 V	±20V	680 pF @ 25 V	AEC-Q101	-	TO-252AA	Automotive	93W (Tc)	-55°C ~ 175°C (TJ)

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