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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SFS9630

SFS9630

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

16,033 -
SFS9630

数据表

- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 800mOhm @ 2.2A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 200 V ±30V 965 pF @ 25 V - - TO-220F - 33W (Tc) -55°C ~ 150°C (TJ)
NDS9405

NDS9405

MOSFET P-CH 20V 4.3A 8SOIC

Fairchild Semiconductor

14,000 -
NDS9405

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) 4.5V, 10V 100mOhm @ 2A, 10V Surface Mount 3V @ 250µA 40 nC @ 10 V 20 V ±20V 1425 pF @ 10 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQPF7P06

FQPF7P06

MOSFET P-CH 60V 5.3A TO220F

Fairchild Semiconductor

13,827 -
FQPF7P06

数据表

QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 410mOhm @ 2.65A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 60 V ±25V 295 pF @ 25 V - - TO-220F-3 - 24W (Tc) -55°C ~ 175°C (TJ)
SFP9634

SFP9634

MOSFET P-CH 250V 5A TO220-3

Fairchild Semiconductor

11,348 -
SFP9634

数据表

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.3Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 37 nC @ 10 V 250 V ±30V 975 pF @ 25 V - - TO-220-3 - 70W (Tc) -55°C ~ 150°C (TJ)
HUF76407D3

HUF76407D3

MOSFET N-CH 60V 12A IPAK

Fairchild Semiconductor

11,253 -
HUF76407D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V Through Hole 3V @ 250µA 11.3 nC @ 10 V 60 V ±16V 350 pF @ 25 V - - IPAK - 38W (Tc) -55°C ~ 175°C (TJ)
IRFU130ATU

IRFU130ATU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8,698 -
IRFU130ATU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 110mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 100 V ±20V 790 pF @ 25 V - - IPAK - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
FDD8750

FDD8750

MOSFET N-CH 25V 6.5A/2.7A DPAK

Fairchild Semiconductor

8,245 -
FDD8750

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4.5V, 10V 40mOhm @ 2.7A, 10V Surface Mount 2.5V @ 250µA 9 nC @ 10 V 25 V ±20V 425 pF @ 13 V - - TO-252 (DPAK) - 18W (Tc) -55°C ~ 175°C (TJ)
FQD5N30TF

FQD5N30TF

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor

6,905 -
FQD5N30TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V Surface Mount 5V @ 250µA 13 nC @ 10 V 300 V ±30V 430 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FQI11P06TU

FQI11P06TU

MOSFET P-CH 60V 11.4A I2PAK

Fairchild Semiconductor

5,955 -
FQI11P06TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 60 V ±25V 550 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ)
FQB3P20TM

FQB3P20TM

MOSFET P-CH 200V 2.8A D2PAK

Fairchild Semiconductor

3,077 -
FQB3P20TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V Surface Mount 5V @ 250µA 8 nC @ 10 V 200 V ±30V 250 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
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