| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUF75321S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,303 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 34mOhm @ 35A, 10V | Surface Mount | 4V @ 250µA | 44 nC @ 20 V | 55 V | ±20V | 680 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 93W (Tc) | -55°C ~ 175°C (TJ) |
|
FQD17N08LTFMOSFET N-CH 80V 12.9A TO252 Fairchild Semiconductor |
1,207 | - |
|
数据表 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12.9A (Tc) | 5V, 10V | 100mOhm @ 6.45A, 10V | Surface Mount | 2V @ 250µA | 11.5 nC @ 5 V | 80 V | ±20V | 520 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP6N25MOSFET N-CH 250V 5.5A TO220-3 Fairchild Semiconductor |
1,189 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 2.75A, 10V | Through Hole | 5V @ 250µA | 8.5 nC @ 10 V | 250 V | ±30V | 300 pF @ 25 V | - | - | TO-220-3 | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
|
FDZ3N513ZTMOSFET N-CH 30V 1.1A 4WLCSP Fairchild Semiconductor |
25,469 | - |
|
数据表 |
- | 4-XFBGA, WLCSP | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1.1A | - | 462mOhm @ 300mA, 4.5V | Surface Mount | 1.5V @ 250µA | 1 nC @ 4.5 V | 30 V | +5.5V, -300mV | 85 pF @ 15 V | - | Schottky Diode (Isolated) | 4-WLCSP (1x1) | - | 1W (Ta) | -55°C ~ 125°C (TJ) |
|
SFW9530TMMOSFET P-CH 100V 10.5A D2PAK Fairchild Semiconductor |
1,600 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10.5A (Tc) | 10V | 300mOhm @ 5.3A, 10V | Surface Mount | 4V @ 250µA | 38 nC @ 10 V | 100 V | ±30V | 1035 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.8W (Ta), 66W (Tc) | -55°C ~ 175°C (TJ) |
|
FDD8586MOSFET N-CH 20V 35A TO252AA Fairchild Semiconductor |
70,000 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 5.5mOhm @ 35A, 10V | Surface Mount | 2.5V @ 250µA | 48 nC @ 10 V | 20 V | ±20V | 2480 pF @ 10 V | - | - | TO-252 (DPAK) | - | 77W (Tc) | -55°C ~ 175°C (TJ) |
|
ISL9N315AD3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
68,479 | - |
|
数据表 |
UltraFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 15mOhm @ 30A, 10V | Surface Mount | 3V @ 250µA | 28 nC @ 10 V | 30 V | ±20V | 900 pF @ 15 V | - | - | TO-252 (DPAK) | - | 55W (Ta) | -55°C ~ 175°C (TJ) |
|
FDS4410MOSFET N-CH 30V 10A 8SOIC Fairchild Semiconductor |
39,200 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | Surface Mount | 3V @ 250µA | 31 nC @ 10 V | 30 V | ±20V | 1340 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
HUFA76407P3MOSFET N-CH 60V 13A TO220-3 Fairchild Semiconductor |
23,898 | - |
|
数据表 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | Through Hole | 3V @ 250µA | 11.3 nC @ 10 V | 60 V | ±16V | 350 pF @ 25 V | - | - | TO-220-3 | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
FDFMA2P853MOSFET P-CH 20V 3A 6MICROFET Fairchild Semiconductor |
21,746 | - |
|
数据表 |
PowerTrench® | 6-VDFN Exposed Pad | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | Surface Mount | 1.3V @ 250µA | 6 nC @ 4.5 V | 20 V | ±8V | 435 pF @ 10 V | - | Schottky Diode (Isolated) | 6-MicroFET (2x2) | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) |