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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUF75321S3ST

HUF75321S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,303 -
HUF75321S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 34mOhm @ 35A, 10V Surface Mount 4V @ 250µA 44 nC @ 20 V 55 V ±20V 680 pF @ 25 V - - TO-263 (D2PAK) - 93W (Tc) -55°C ~ 175°C (TJ)
FQD17N08LTF

FQD17N08LTF

MOSFET N-CH 80V 12.9A TO252

Fairchild Semiconductor

1,207 -
FQD17N08LTF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12.9A (Tc) 5V, 10V 100mOhm @ 6.45A, 10V Surface Mount 2V @ 250µA 11.5 nC @ 5 V 80 V ±20V 520 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ)
FQP6N25

FQP6N25

MOSFET N-CH 250V 5.5A TO220-3

Fairchild Semiconductor

1,189 -
FQP6N25

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V Through Hole 5V @ 250µA 8.5 nC @ 10 V 250 V ±30V 300 pF @ 25 V - - TO-220-3 - 63W (Tc) -55°C ~ 150°C (TJ)
FDZ3N513ZT

FDZ3N513ZT

MOSFET N-CH 30V 1.1A 4WLCSP

Fairchild Semiconductor

25,469 -
FDZ3N513ZT

数据表

- 4-XFBGA, WLCSP Bulk Active N-Channel MOSFET (Metal Oxide) 1.1A - 462mOhm @ 300mA, 4.5V Surface Mount 1.5V @ 250µA 1 nC @ 4.5 V 30 V +5.5V, -300mV 85 pF @ 15 V - Schottky Diode (Isolated) 4-WLCSP (1x1) - 1W (Ta) -55°C ~ 125°C (TJ)
SFW9530TM

SFW9530TM

MOSFET P-CH 100V 10.5A D2PAK

Fairchild Semiconductor

1,600 -
SFW9530TM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 300mOhm @ 5.3A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 100 V ±30V 1035 pF @ 25 V - - TO-263 (D2PAK) - 3.8W (Ta), 66W (Tc) -55°C ~ 175°C (TJ)
FDD8586

FDD8586

MOSFET N-CH 20V 35A TO252AA

Fairchild Semiconductor

70,000 -
FDD8586

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 48 nC @ 10 V 20 V ±20V 2480 pF @ 10 V - - TO-252 (DPAK) - 77W (Tc) -55°C ~ 175°C (TJ)
ISL9N315AD3ST

ISL9N315AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

68,479 -
ISL9N315AD3ST

数据表

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 15mOhm @ 30A, 10V Surface Mount 3V @ 250µA 28 nC @ 10 V 30 V ±20V 900 pF @ 15 V - - TO-252 (DPAK) - 55W (Ta) -55°C ~ 175°C (TJ)
FDS4410

FDS4410

MOSFET N-CH 30V 10A 8SOIC

Fairchild Semiconductor

39,200 -
FDS4410

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 31 nC @ 10 V 30 V ±20V 1340 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
HUFA76407P3

HUFA76407P3

MOSFET N-CH 60V 13A TO220-3

Fairchild Semiconductor

23,898 -
HUFA76407P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V Through Hole 3V @ 250µA 11.3 nC @ 10 V 60 V ±16V 350 pF @ 25 V - - TO-220-3 - 38W (Tc) -55°C ~ 175°C (TJ)
FDFMA2P853

FDFMA2P853

MOSFET P-CH 20V 3A 6MICROFET

Fairchild Semiconductor

21,746 -
FDFMA2P853

数据表

PowerTrench® 6-VDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.8V, 4.5V 120mOhm @ 3A, 4.5V Surface Mount 1.3V @ 250µA 6 nC @ 4.5 V 20 V ±8V 435 pF @ 10 V - Schottky Diode (Isolated) 6-MicroFET (2x2) - 1.4W (Ta) -55°C ~ 150°C (TJ)
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