Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 21

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FQD1N60TM MOSFET N-CH 600V 1A DPAK Fairchild Semiconductor	4,980	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	1A (Tc)	10V	11.5Ohm @ 500mA, 10V	Surface Mount	5V @ 250µA	6 nC @ 10 V	600 V	±30V	150 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)
FQI5N20TU MOSFET N-CH 200V 4.5A I2PAK Fairchild Semiconductor	4,195	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.2Ohm @ 2.25A, 10V	Through Hole	5V @ 250µA	7.5 nC @ 10 V	200 V	±30V	270 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
FQI3N25TU MOSFET N-CH 250V 2.8A I2PAK Fairchild Semiconductor	3,648	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	2.2Ohm @ 1.4A, 10V	Through Hole	5V @ 250µA	5.2 nC @ 10 V	250 V	±30V	170 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)
IRF610B N-CHANNEL POWER MOSFET Fairchild Semiconductor	3,625	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.5Ohm @ 1.65A, 10V	Through Hole	4V @ 250µA	9.3 nC @ 10 V	200 V	±30V	225 pF @ 25 V	-	-	TO-220	-	38W (Tc)	-55°C ~ 150°C (TJ)
FQPF7N20 MOSFET N-CH 200V 4.8A TO220F Fairchild Semiconductor	3,159	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.8A (Tc)	10V	690mOhm @ 2.4A, 10V	Through Hole	5V @ 250µA	10 nC @ 10 V	200 V	±30V	400 pF @ 25 V	-	-	TO-220F-3	-	37W (Tc)	-55°C ~ 150°C (TJ)
FQI13N06TU MOSFET N-CH 60V 13A I2PAK Fairchild Semiconductor	2,534	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	135mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	7.5 nC @ 10 V	60 V	±25V	310 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.75W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
FQPF13N06 MOSFET N-CH 60V 9.4A TO220F Fairchild Semiconductor	2,334	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.4A (Tc)	10V	135mOhm @ 4.7A, 10V	Through Hole	4V @ 250µA	7.5 nC @ 10 V	60 V	±25V	310 pF @ 25 V	-	-	TO-220F-3	-	24W (Tc)	-55°C ~ 175°C (TJ)
FQP17N08 MOSFET N-CH 80V 16.5A TO220-3 Fairchild Semiconductor	2,331	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	16.5A (Tc)	10V	115mOhm @ 8.25A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	80 V	±25V	450 pF @ 25 V	-	-	TO-220-3	-	65W (Tc)	-55°C ~ 175°C (TJ)
FQPF7N20L MOSFET N-CH 200V 5A TO220F Fairchild Semiconductor	1,711	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	5V, 10V	750mOhm @ 2.5A, 10V	Through Hole	2V @ 250µA	9 nC @ 5 V	200 V	±20V	500 pF @ 25 V	-	-	TO-220F-3	-	37W (Tc)	-55°C ~ 150°C (TJ)
SSS4N60BT TRANS MOSFET N-CH 600V 4A 3PIN(3 Fairchild Semiconductor	1,534	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tj)	10V	2.5Ohm @ 2A, 10V	Through Hole	4V @ 250µA	29 nC @ 10 V	600 V	±30V	920 pF @ 25 V	-	-	TO-220F-3	-	33W (Tc)	-55°C ~ 150°C (TJ)

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