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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SFS9Z34

SFS9Z34

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,772 -
SFS9Z34

数据表

- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 140mOhm @ 6A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 60 V ±30V 1155 pF @ 25 V - - TO-220F - 36W (Tc) -55°C ~ 175°C (TJ)
FQPF2N50

FQPF2N50

MOSFET N-CH 500V 1.3A TO220F

Fairchild Semiconductor

1,628 -
FQPF2N50

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Tc) 10V 5.3Ohm @ 650mA, 10V Through Hole 5V @ 250µA 8 nC @ 10 V 500 V ±30V 230 pF @ 25 V - - TO-220F-3 - 20W (Tc) -55°C ~ 150°C (TJ)
FDMA530PZ

FDMA530PZ

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

1,382 -
FDMA530PZ

数据表

PowerTrench® 6-WDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 6.8A (Ta) 4.5V, 10V 35mOhm @ 6.8A, 10V Surface Mount 3V @ 250µA 24 nC @ 10 V 30 V ±25V 1070 pF @ 15 V - - 6-MicroFET (2x2) - 2.4W (Ta) -55°C ~ 150°C (TJ)
FQD2N50TF

FQD2N50TF

MOSFET N-CH 500V 1.6A DPAK

Fairchild Semiconductor

1,015 -
FQD2N50TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 5.3Ohm @ 800mA, 10V Surface Mount 5V @ 250µA 8 nC @ 10 V 500 V ±30V 230 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
SSU1N50BTU

SSU1N50BTU

1.3A, 520V, 5.3OHM, N-CHANNEL,

Fairchild Semiconductor

40,320 -
SSU1N50BTU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 1.3A (Tc) 10V 5.3Ohm @ 650mA, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 520 V ±30V 340 pF @ 25 V - - IPAK - 2.5W (Ta), 26W (Tc) -55°C ~ 150°C (TJ)
FDD6782A

FDD6782A

MOSFET N-CH 25V 20A DPAK

Fairchild Semiconductor

80,440 -
FDD6782A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 10.5mOhm @ 14.9A, 10V Surface Mount 3V @ 250µA 27 nC @ 10 V 25 V ±20V 1065 pF @ 13 V - - TO-252 (DPAK) - 3.7W (Ta), 31W (Tc) -55°C ~ 175°C (TJ)
SFU9220TU

SFU9220TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

29,376 -
SFU9220TU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.5Ohm @ 1.6A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 200 V ±30V 540 pF @ 25 V - - IPAK - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
ECH8320-TL-H

ECH8320-TL-H

MOSFET P-CH 20V 9.5A SOT28FL

Fairchild Semiconductor

12,000 -
ECH8320-TL-H

数据表

- 8-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 9.5A (Ta) - 14.5mOhm @ 5A, 4.5V Surface Mount 1.3V @ 1mA 25 nC @ 4.5 V 20 V ±10V 2300 pF @ 10 V - - SOT-28FL/ECH8 - 1.6W (Ta) 150°C
SFS9634

SFS9634

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

10,835 -
SFS9634

数据表

- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 3.4A (Tc) 10V 1.30Ohm @ 1.7A, 10V Through Hole 4V @ 250µA 37 nC @ 10 V 250 V ±30V 975 pF @ 25 V - - TO-220F - 33W (Tc) -55°C ~ 150°C (TJ)
HUF76609D3S

HUF76609D3S

MOSFET N-CH 100V 10A DPAK

Fairchild Semiconductor

9,199 -
HUF76609D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V Surface Mount 3V @ 250µA 16 nC @ 10 V 100 V ±16V 425 pF @ 25 V - - TO-252 (DPAK) - 49W (Tc) -55°C ~ 175°C (TJ)
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