Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 18

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFR9110TF 100V P-CHANNEL MOSFET Fairchild Semiconductor	3,500	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	Surface Mount	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	290 pF @ 25 V	-	-	DPAK	-	25W (Tc)	-55°C ~ 150°C (TJ)
FQT4N20TF MOSFET N-CH 200V 850MA SOT223-4 Fairchild Semiconductor	2,363	-	询价单	数据表	-	TO-261-4, TO-261AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	850mA (Tc)	10V	1.4Ohm @ 425mA, 10V	Surface Mount	5V @ 250µA	6.5 nC @ 10 V	200 V	±30V	220 pF @ 25 V	-	-	SOT-223-4	-	2.2W (Tc)	-55°C ~ 150°C (TJ)
FQD3N30TF MOSFET N-CH 300V 2.4A DPAK Fairchild Semiconductor	1,970	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.4A (Tc)	10V	2.2Ohm @ 1.2A, 10V	Surface Mount	5V @ 250µA	7 nC @ 10 V	300 V	±30V	230 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)
SSU2N60BTU N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,869	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.8A (Tc)	10V	5Ohm @ 900mA, 10V	Through Hole	4V @ 250µA	17 nC @ 10 V	600 V	±30V	490 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 44W (Tc)	-55°C ~ 150°C (TJ)
FQB7N10TM MOSFET N-CH 100V 7.3A D2PAK Fairchild Semiconductor	1,503	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	350mOhm @ 3.65A, 10V	Surface Mount	4V @ 250µA	7.5 nC @ 10 V	100 V	±25V	250 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.75W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)
FQP9N15 MOSFET N-CH 150V 9A TO220-3 Fairchild Semiconductor	1,418	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	400mOhm @ 4.5A, 10V	Through Hole	4V @ 250µA	13 nC @ 10 V	150 V	±25V	410 pF @ 25 V	-	-	TO-220-3	-	75W (Tc)	-55°C ~ 175°C (TJ)
FQD3N40TM MOSFET N-CH 400V 2A DPAK Fairchild Semiconductor	1,367	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	3.4Ohm @ 1A, 10V	Surface Mount	5V @ 250µA	7.5 nC @ 10 V	400 V	±30V	230 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)
ISL9N310AS3ST N-CHANNEL POWER MOSFET Fairchild Semiconductor	73,954	-	询价单	数据表	UltraFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	62A (Tc)	4.5V, 10V	10mOhm @ 62A, 10A	Surface Mount	3V @ 250µA	48 nC @ 10 V	30 V	±20V	1800 pF @ 15 V	-	-	TO-263AB	-	70W (Ta)	-55°C ~ 175°C (TJ)
HUF76105SK8T N-CHANNEL POWER MOSFET Fairchild Semiconductor	72,500	-	询价单	数据表	UltraFET®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Ta)	4.5V, 10V	50mOhm @ 5.5A, 10V	Surface Mount	3V @ 250µA	11 nC @ 10 V	30 V	±20V	325 pF @ 25 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
ISL9N308AD3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	55,575	-	询价单	数据表	UltraFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	8mOhm @ 50A, 10V	Through Hole	3V @ 250µA	68 nC @ 10 V	30 V	±20V	2600 pF @ 15 V	-	-	IPAK	-	100W (Tc)	-55°C ~ 175°C (TJ)

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