Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 20

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
ISL9N310AD3ST_NL N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,125	-	询价单	数据表	UltraFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	10Ohm @ 35A, 10A	Surface Mount	3V @ 250µA	48 nC @ 10 V	30 V	±20V	1800 pF @ 15 V	-	-	TO-252 (DPAK)	-	70W (Ta)	-55°C ~ 175°C (TJ)
FQD630TF MOSFET N-CH 200V 7A DPAK Fairchild Semiconductor	207,503	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	400mOhm @ 3.5A, 10V	Surface Mount	4V @ 250µA	25 nC @ 10 V	200 V	±25V	550 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 46W (Tc)	-55°C ~ 150°C (TJ)
FDU6612A MOSFET N-CH 30V 9.5A/30A IPAK Fairchild Semiconductor	44,990	-	询价单	数据表	PowerTrench®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.5A (Ta), 30A (Tc)	4.5V, 10V	20mOhm @ 9.5A, 10V	Through Hole	3V @ 250µA	9.4 nC @ 5 V	30 V	±20V	660 pF @ 15 V	-	-	IPAK	-	2.8W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)
FQD20N06LETM MOSFET N-CH 60V 17.2A DPAK Fairchild Semiconductor	44,818	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	17.2A (Tc)	5V, 10V	60mOhm @ 8.6A, 10V	Surface Mount	2.5V @ 250µA	13 nC @ 5 V	60 V	±20V	665 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 38W (Tc)	-55°C ~ 150°C (TJ)
FQP13N06 MOSFET N-CH 60V 13A TO220-3 Fairchild Semiconductor	36,013	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	135mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	7.5 nC @ 10 V	60 V	±25V	310 pF @ 25 V	-	-	TO-220-3	-	45W (Tc)	-55°C ~ 175°C (TJ)
FDMA0104 TRANS MOSFET N-CH 20V 9.4A 6PIN Fairchild Semiconductor	11,154	-	询价单	数据表	PowerTrench®	6-WDFN Exposed Pad	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9.4A (Ta)	-	14.5mOhm @ 9.4A, 4.5V	Surface Mount	1V @ 250µA	17.5 nC @ 4.5 V	20 V	-	1680 pF @ 10 V	-	-	6-MicroFET (2x2)	-	1.9W (Ta)	-55°C ~ 150°C (TJ)
FQP4N20 MOSFET N-CH 200V 3.6A TO220-3 Fairchild Semiconductor	10,753	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	10V	1.4Ohm @ 1.8A, 10V	Through Hole	5V @ 250µA	6.5 nC @ 10 V	200 V	±30V	220 pF @ 25 V	-	-	TO-220-3	-	45W (Tc)	-55°C ~ 150°C (TJ)
FQB9N08TM MOSFET N-CH 80V 9.3A D2PAK Fairchild Semiconductor	7,169	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.3A (Tc)	10V	210mOhm @ 4.65A, 10V	Surface Mount	4V @ 250µA	7.7 nC @ 10 V	80 V	±25V	250 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.75W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)
SFU9230BTU P-CHANNEL POWER MOSFET Fairchild Semiconductor	5,040	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	5.4A (Tc)	10V	800mOhm @ 2.7A, 10V	Through Hole	4V @ 250µA	45 nC @ 10 V	200 V	±30V	1000 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 49W (Tc)	-55°C ~ 150°C (TJ)
FQI4N20TU MOSFET N-CH 200V 3.6A I2PAK Fairchild Semiconductor	5,000	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	10V	1.4Ohm @ 1.8A, 10V	Through Hole	5V @ 250µA	6.5 nC @ 10 V	200 V	±30V	220 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)

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