Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 24

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HUFA75309T3ST MOSFET N-CH 55V 3A SOT223-4 Fairchild Semiconductor	34,459	-	询价单	数据表	UltraFET™	TO-261-4, TO-261AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	10V	70mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	23 nC @ 20 V	55 V	±20V	352 pF @ 25 V	-	-	SOT-223-4	-	1.1W (Ta)	-55°C ~ 150°C (TJ)
ISL9N306AS3ST N-CHANNEL POWER MOSFET Fairchild Semiconductor	33,931	-	询价单	数据表	UltraFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	6mOhm @ 75A, 10V	Surface Mount	3V @ 250µA	90 nC @ 10 V	30 V	±20V	3400 pF @ 15 V	-	-	TO-263AB	-	125W (Ta)	-55°C ~ 175°C (TJ)
IRFW644BTM N-CHANNEL POWER MOSFET Fairchild Semiconductor	19,077	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	280mOhm @ 7A, 10V	Surface Mount	4V @ 250µA	60 nC @ 10 V	250 V	±30V	1600 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 139W (Tc)	-55°C ~ 150°C (TJ)
SSP2N60A N-CHANNEL POWER MOSFET Fairchild Semiconductor	9,000	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	5Ohm @ 1A, 10V	Through Hole	4V @ 250µA	21 nC @ 10 V	600 V	±30V	410 pF @ 25 V	-	-	TO-220	-	54W (Tc)	-55°C ~ 150°C (TJ)
ISL9N306AD3ST N-CHANNEL POWER MOSFET Fairchild Semiconductor	8,371	-	询价单	数据表	UltraFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	6mOhm @ 50A, 10V	Surface Mount	3V @ 250µA	90 nC @ 10 V	30 V	±20V	3400 pF @ 15 V	-	-	TO-252 (DPAK)	-	125W (Ta)	-55°C ~ 155°C (TJ)
SFW9510TM P-CHANNEL POWER MOSFET Fairchild Semiconductor	6,259	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	10V	1.2Ohm @ 1.8A, 10V	Surface Mount	4V @ 250µA	10 nC @ 10 V	100 V	±30V	335 pF @ 25 V	-	-	TO-252 (DPAK)	-	3.8W (Ta), 32W (Tc)	-55°C ~ 175°C (TJ)
FQPF5P10 MOSFET P-CH 100V 2.9A TO220F Fairchild Semiconductor	4,443	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.9A (Tc)	10V	1.05Ohm @ 1.45A, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	100 V	±30V	250 pF @ 25 V	-	-	TO-220F-3	-	23W (Tc)	-55°C ~ 175°C (TJ)
FQP630 MOSFET N-CH 200V 9A TO220-3 Fairchild Semiconductor	4,361	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	400mOhm @ 4.5A, 10V	Through Hole	4V @ 250µA	25 nC @ 10 V	200 V	±25V	550 pF @ 25 V	-	-	TO-220-3	-	78W (Tc)	-55°C ~ 150°C (TJ)
FQPF5N20L MOSFET N-CH 200V 3.5A TO220F Fairchild Semiconductor	3,834	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.5A (Tc)	5V, 10V	1.2Ohm @ 1.75A, 10V	Through Hole	2V @ 250µA	6.2 nC @ 5 V	200 V	±20V	325 pF @ 25 V	-	-	TO-220F-3	-	32W (Tc)	-55°C ~ 150°C (TJ)
FQPF17N08 MOSFET N-CH 80V 11.2A TO220F Fairchild Semiconductor	2,970	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11.2A (Tc)	10V	115mOhm @ 5.6A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	80 V	±25V	450 pF @ 25 V	-	-	TO-220F-3	-	30W (Tc)	-55°C ~ 175°C (TJ)

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