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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDU8878

FDU8878

MOSFET N-CH 30V 11A/40A IPAK

Fairchild Semiconductor

41,569 -
FDU8878

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 40A (Tc) 4.5V, 10V 15mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 26 nC @ 10 V 30 V ±20V 880 pF @ 15 V - - IPAK - 40W (Tc) -55°C ~ 175°C (TJ)
NDB603AL

NDB603AL

MOSFET N-CH 30V 25A D2PAK

Fairchild Semiconductor

30,000 -
NDB603AL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V Surface Mount 3V @ 250µA 40 nC @ 10 V 30 V ±20V 1100 pF @ 15 V - - TO-263 (D2PAK) - 50W (Tc) -65°C ~ 175°C (TJ)
FDFMJ2P023Z

FDFMJ2P023Z

MOSFET P-CH 20V 2.9A SC75 MICROF

Fairchild Semiconductor

29,990 -
FDFMJ2P023Z

数据表

PowerTrench® 6-WFDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 2.9A (Ta) 1.5V, 4.5V 112mOhm @ 2.9A, 4.5V Surface Mount 1V @ 250µA 6.5 nC @ 4.5 V 20 V ±8V 400 pF @ 10 V - Schottky Diode (Isolated) SC-75, MicroFET - 1.4W (Ta) -55°C ~ 150°C (TJ)
NTMFS4936NCT1G

NTMFS4936NCT1G

11.6A, 30V, 0.0048OHM, N-CHANNE

Fairchild Semiconductor

10,500 -
NTMFS4936NCT1G

数据表

- 8-PowerTDFN, 5 Leads Bulk Active N-Channel MOSFET (Metal Oxide) 11.6A (Ta), 79A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 43 nC @ 10 V 30 V ±20V 3044 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 920mW (Ta), 43W (Tc) -55°C ~ 150°C (TJ)
RFD8P06LE

RFD8P06LE

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,200 -
RFD8P06LE

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 8A (Tc) 4.5V, 5V 300mOhm @ 8A, 5V Through Hole 2V @ 250µA 30 nC @ 10 V 60 V ±10V 675 pF @ 25 V - - IPAK - 48W (Tc) -55°C ~ 175°C (TJ)
HUFA75321D3

HUFA75321D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor

6,970 -
HUFA75321D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 36mOhm @ 20A, 10V Through Hole 4V @ 250µA 44 nC @ 20 V 55 V ±20V 680 pF @ 25 V - - IPAK - 93W (Tc) -55°C ~ 175°C (TJ)
SFU9130TU

SFU9130TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,040 -
SFU9130TU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 9.8A (Tc) 10V 300mOhm @ 4.9A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 100 V ±30V 1035 pF @ 25 V - - IPAK - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
HUF76107D3ST

HUF76107D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,730 -
HUF76107D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V Surface Mount 3V @ 250µA 10.3 nC @ 10 V 30 V ±20V 315 pF @ 25 V - - TO-252 (DPAK) - 35W (Tc) -55°C ~ 150°C (TJ)
HUF75307D3ST_NL

HUF75307D3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,597 -
HUF75307D3ST_NL

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 90mOhm @ 15A, 10V Surface Mount 4V @ 250µA 20 nC @ 20 V 55 V ±20V 250 pF @ 25 V - - TO-252 (DPAK) - 45W (Tc) -55°C ~ 175°C (TJ)
SSP1N50B

SSP1N50B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,000 -
SSP1N50B

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 5.3Ohm @ 750mA, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 520 V ±30V 340 pF @ 25 V - - TO-220 - 36W (Tc) -55°C ~ 150°C (TJ)
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