Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SFU9214TU P-CHANNEL POWER MOSFET Fairchild Semiconductor	56,998	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	1.53A (Tc)	10V	4Ohm @ 770mA, 10V	Through Hole	4V @ 250µA	11 nC @ 10 V	250 V	±30V	295 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)
FQD1N60TF MOSFET N-CH 600V 1A DPAK Fairchild Semiconductor	42,509	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	1A (Tc)	10V	11.5Ohm @ 500mA, 10V	Surface Mount	5V @ 250µA	6 nC @ 10 V	600 V	±30V	150 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)
NDP603AL MOSFET N-CH 30V 25A TO220-3 Fairchild Semiconductor	34,234	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	4.5V, 10V	22mOhm @ 25A, 10V	Through Hole	3V @ 250µA	40 nC @ 10 V	30 V	±20V	1100 pF @ 15 V	-	-	TO-220-3	-	50W (Tc)	-65°C ~ 175°C (TJ)
IRFM220BTF N-CHANNEL POWER MOSFET Fairchild Semiconductor	24,000	-	询价单	数据表	-	TO-261-4, TO-261AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.13A (Tc)	10V	800mOhm @ 570mA, 10V	Surface Mount	4V @ 250µA	16 nC @ 10 V	200 V	±30V	390 pF @ 25 V	-	-	SOT-223-4	-	2.4W (Tc)	-55°C ~ 150°C (TJ)
FDZ299P MOSFET P-CH 20V 4.6A 9BGA Fairchild Semiconductor	9,000	-	询价单	数据表	PowerTrench®	9-WFBGA	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.6A (Ta)	2.5V, 4.5V	55mOhm @ 4.6A, 4.5V	Surface Mount	1.5V @ 250µA	9 nC @ 4.5 V	20 V	±12V	742 pF @ 10 V	-	-	9-BGA (2x2.1)	-	1.7W (Ta)	-55°C ~ 150°C (TJ)
SFU9210TU P-CHANNEL POWER MOSFET Fairchild Semiconductor	4,740	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	1.6A (Tc)	10V	3Ohm @ 800mA, 10V	Through Hole	4V @ 250µA	11 nC @ 10 V	200 V	±30V	285 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)
HUF76619D3S MOSFET N-CH 100V 18A TO252AA Fairchild Semiconductor	4,657	-	询价单	数据表	UltraFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4.5V, 10V	85mOhm @ 18A, 10V	Surface Mount	3V @ 250µA	29 nC @ 10 V	100 V	±16V	767 pF @ 25 V	-	-	TO-252 (DPAK)	-	75W (Tc)	-55°C ~ 175°C (TJ)
FQPF2N30 MOSFET N-CH 300V 1.34A TO220F Fairchild Semiconductor	4,057	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.34A (Tc)	10V	3.7Ohm @ 670mA, 10V	Through Hole	5V @ 250µA	5 nC @ 10 V	300 V	±30V	130 pF @ 25 V	-	-	TO-220F-3	-	16W (Tc)	-55°C ~ 150°C (TJ)
FQPF3P20 MOSFET P-CH 200V 2.2A TO220F Fairchild Semiconductor	4,000	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.2A (Tc)	10V	2.7Ohm @ 1.1A, 10V	Through Hole	5V @ 250µA	8 nC @ 10 V	200 V	±30V	250 pF @ 25 V	-	-	TO-220F-3	-	32W (Tc)	-55°C ~ 150°C (TJ)
FQI7N10LTU MOSFET N-CH 100V 7.3A I2PAK Fairchild Semiconductor	4,000	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	5V, 10V	350mOhm @ 3.65A, 10V	Through Hole	2V @ 250µA	6 nC @ 5 V	100 V	±20V	290 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.75W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)

共 1251 条记录«上一页 1... 13 14 15 161718 19 20...126 下一页»