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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUFA76419P3

HUFA76419P3

MOSFET N-CH 60V 29A TO220-3

Fairchild Semiconductor

14,432 -
HUFA76419P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V Through Hole 3V @ 250µA 28 nC @ 10 V 60 V ±16V 900 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 175°C (TJ)
HUFA76413D3ST

HUFA76413D3ST

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

9,843 -
HUFA76413D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 49mOhm @ 20A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 60 V ±16V 645 pF @ 25 V - - TO-252 (DPAK) - 60W (Tc) -55°C ~ 175°C (TJ)
IRFW530ATM

IRFW530ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,166 -
IRFW530ATM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 110mOhm @ 7A, 10V Surface Mount 4V @ 250µA 36 nC @ 10 V 100 V ±20V 790 pF @ 25 V - - D2PAK - 3.8W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
SFW9520TM

SFW9520TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,994 -
SFW9520TM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 600mOhm @ 3A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 100 V ±30V 550 pF @ 25 V - - TO-252 (DPAK) - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ)
FDMA7628

FDMA7628

FDMA7628 - SINGLE N-CHANNEL 1.5

Fairchild Semiconductor

89,038 -
FDMA7628

数据表

PowerTrench® 6-WDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta) 1.5V, 4.5V 14.5mOhm @ 9.4A, 4.5V Surface Mount 1V @ 250µA 17.5 nC @ 4.5 V 20 V ±8V 1680 pF @ 10 V - - 6-MicroFET (2x2) - 1.9W (Ta) -55°C ~ 150°C (TJ)
FDS6294

FDS6294

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

18,921 -
FDS6294

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 11.3mOhm @ 13A, 10V Surface Mount 3V @ 250µA 14 nC @ 5 V 30 V ±20V 1205 pF @ 15 V - - 8-SOIC - 3W (Ta) -55°C ~ 175°C (TJ)
IRF730B

IRF730B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

238,000 -
IRF730B

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V Through Hole 4V @ 250µA 33 nC @ 10 V 400 V ±30V 1000 pF @ 25 V - - TO-220 - 73W (Tc) -55°C ~ 150°C (TJ)
FDZ204P

FDZ204P

MOSFET P-CH 20V 4.5A 9BGA

Fairchild Semiconductor

152,334 -
FDZ204P

数据表

PowerTrench® 9-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 2.5V, 4.5V 45mOhm @ 4.5A, 4.5V Surface Mount 1.5V @ 250µA 13 nC @ 4.5 V 20 V ±12V 884 pF @ 10 V - - 9-BGA (2x2.1) - 1.8W (Ta) -55°C ~ 150°C (TJ)
FDU8780

FDU8780

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor

81,309 -
FDU8780

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 8.5mOhm @ 35A, 10V Through Hole 2.5V @ 250µA 29 nC @ 10 V 25 V ±20V 1440 pF @ 13 V - - IPAK - 50W (Tc) -55°C ~ 175°C (TJ)
FDFS6N303

FDFS6N303

MOSFET N-CH 30V 6A 8SOIC

Fairchild Semiconductor

74,265 -
FDFS6N303

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 35mOhm @ 6A, 10V Surface Mount 3V @ 250µA 17 nC @ 10 V 30 V ±20V 350 pF @ 15 V - Schottky Diode (Isolated) 8-SOIC - 900mW (Ta) -55°C ~ 150°C (TJ)
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