| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQP9N08MOSFET N-CH 80V 9.3A TO220-3 Fairchild Semiconductor |
3,153 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.3A (Tc) | 10V | 210mOhm @ 4.65A, 10V | Through Hole | 4V @ 250µA | 7.7 nC @ 10 V | 80 V | ±25V | 250 pF @ 25 V | - | - | TO-220-3 | - | 40W (Tc) | -55°C ~ 175°C (TJ) |
|
FQP4N25MOSFET N-CH 250V 3.6A TO220-3 Fairchild Semiconductor |
2,950 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 1.75Ohm @ 1.8A, 10V | Through Hole | 5V @ 250µA | 5.6 nC @ 10 V | 250 V | ±30V | 200 pF @ 25 V | - | - | TO-220-3 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
FDU6676ASMOSFET N-CH 30V 90A IPAK Fairchild Semiconductor |
1,708 | - |
|
数据表 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Ta) | 4.5V, 10V | 5.8mOhm @ 16A, 10V | Through Hole | 3V @ 250µA | 64 nC @ 10 V | 30 V | ±20V | 2470 pF @ 15 V | - | - | IPAK | - | 70W (Ta) | -55°C ~ 150°C (TJ) |
|
HUF75309D3SMOSFET N-CH 55V 19A DPAK Fairchild Semiconductor |
1,687 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | - | 70mOhm @ 19A, 10V | Surface Mount | 4V @ 250µA | 24 nC @ 20 V | 55 V | ±20V | 350 pF @ 25 V | - | - | DPAK | - | 55W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFW720BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,600 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3.3A (Tc) | 10V | 1.75Ohm @ 1.65A, 10V | Surface Mount | 4V @ 250µA | 18 nC @ 10 V | 400 V | ±30V | 600 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.13W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) |
|
SFR9224TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
307,692 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 2.5A (Tc) | 10V | 2.4Ohm @ 1.3A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 250 V | ±30V | 540 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
SFU9224TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
273,525 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 2.5A (Tc) | 10V | 2.4Ohm @ 1.3A, 10V | Through Hole | 4V @ 250µA | 20 nC @ 10 V | 250 V | ±30V | 540 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
SFR9224TFP-CHANNEL POWER MOSFET Fairchild Semiconductor |
167,865 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 2.5A (Tc) | 10V | 2.4Ohm @ 1.3A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 250 V | ±30V | 540 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF76013D3STMOSFET N-CH 20V 20A TO252AA Fairchild Semiconductor |
150,700 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 5V, 10V | 22mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 17 nC @ 10 V | 20 V | ±20V | 624 pF @ 20 V | - | - | TO-252 (DPAK) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
NDS352PMOSFET P-CH 20V 850MA SUPERSOT3 Fairchild Semiconductor |
28,035 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 850mA (Ta) | 4.5V, 10V | 350mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | 4 nC @ 5 V | 20 V | ±12V | 125 pF @ 10 V | - | - | SOT-23-3 | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |