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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP9N08

FQP9N08

MOSFET N-CH 80V 9.3A TO220-3

Fairchild Semiconductor

3,153 -
FQP9N08

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 210mOhm @ 4.65A, 10V Through Hole 4V @ 250µA 7.7 nC @ 10 V 80 V ±25V 250 pF @ 25 V - - TO-220-3 - 40W (Tc) -55°C ~ 175°C (TJ)
FQP4N25

FQP4N25

MOSFET N-CH 250V 3.6A TO220-3

Fairchild Semiconductor

2,950 -
FQP4N25

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 1.75Ohm @ 1.8A, 10V Through Hole 5V @ 250µA 5.6 nC @ 10 V 250 V ±30V 200 pF @ 25 V - - TO-220-3 - 52W (Tc) -55°C ~ 150°C (TJ)
FDU6676AS

FDU6676AS

MOSFET N-CH 30V 90A IPAK

Fairchild Semiconductor

1,708 -
FDU6676AS

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Ta) 4.5V, 10V 5.8mOhm @ 16A, 10V Through Hole 3V @ 250µA 64 nC @ 10 V 30 V ±20V 2470 pF @ 15 V - - IPAK - 70W (Ta) -55°C ~ 150°C (TJ)
HUF75309D3S

HUF75309D3S

MOSFET N-CH 55V 19A DPAK

Fairchild Semiconductor

1,687 -
HUF75309D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) - 70mOhm @ 19A, 10V Surface Mount 4V @ 250µA 24 nC @ 20 V 55 V ±20V 350 pF @ 25 V - - DPAK - 55W (Tc) -55°C ~ 175°C (TJ)
IRFW720BTM

IRFW720BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,600 -
IRFW720BTM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 3.3A (Tc) 10V 1.75Ohm @ 1.65A, 10V Surface Mount 4V @ 250µA 18 nC @ 10 V 400 V ±30V 600 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ)
SFR9224TM

SFR9224TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

307,692 -
SFR9224TM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 2.4Ohm @ 1.3A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 250 V ±30V 540 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
SFU9224TU

SFU9224TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

273,525 -
SFU9224TU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 2.4Ohm @ 1.3A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 250 V ±30V 540 pF @ 25 V - - IPAK - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
SFR9224TF

SFR9224TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

167,865 -
SFR9224TF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 2.4Ohm @ 1.3A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 250 V ±30V 540 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
HUF76013D3ST

HUF76013D3ST

MOSFET N-CH 20V 20A TO252AA

Fairchild Semiconductor

150,700 -
HUF76013D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V Surface Mount 3V @ 250µA 17 nC @ 10 V 20 V ±20V 624 pF @ 20 V - - TO-252 (DPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
NDS352P

NDS352P

MOSFET P-CH 20V 850MA SUPERSOT3

Fairchild Semiconductor

28,035 -
NDS352P

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 850mA (Ta) 4.5V, 10V 350mOhm @ 1A, 10V Surface Mount 2.5V @ 250µA 4 nC @ 5 V 20 V ±12V 125 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
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