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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQPF4N20

FQPF4N20

MOSFET N-CH 200V 2.8A TO220F

Fairchild Semiconductor

15,902 -
FQPF4N20

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 1.4Ohm @ 1.4A, 10V Through Hole 5V @ 250µA 6.5 nC @ 10 V 200 V ±30V 220 pF @ 25 V - - TO-220F-3 - 27W (Tc) -55°C ~ 150°C (TJ)
HUFA76413D3S

HUFA76413D3S

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

8,243 -
HUFA76413D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 49mOhm @ 20A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 60 V ±16V 645 pF @ 25 V - - TO-252 (DPAK) - 60W (Tc) -55°C ~ 175°C (TJ)
IRFS254BFP001

IRFS254BFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,200 -
IRFS254BFP001

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 140mOhm @ 8A, 10V Through Hole 4V @ 250µA 123 nC @ 10 V 250 V ±30V 3400 pF @ 25 V - - TO-220F - 90W (Tc) -55°C ~ 150°C (TJ)
IRFM210BTF

IRFM210BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,025 -
IRFM210BTF

数据表

- TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 770mA (Tc) 10V 1.5Ohm @ 390mA, 10V Surface Mount 4V @ 250µA 9.3 nC @ 10 V 200 V ±30V 225 pF @ 25 V - - SOT-223-4 - 2W (Tc) -55°C ~ 150°C (TJ)
FQP5N20L

FQP5N20L

MOSFET N-CH 200V 4.5A TO220-3

Fairchild Semiconductor

5,950 -
FQP5N20L

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 5V, 10V 1.2Ohm @ 2.25A, 10V Through Hole 2V @ 250µA 6.2 nC @ 5 V 200 V ±20V 325 pF @ 25 V - - TO-220-3 - 52W (Tc) -55°C ~ 150°C (TJ)
FQP3N25

FQP3N25

MOSFET N-CH 250V 2.8A TO220-3

Fairchild Semiconductor

5,900 -
FQP3N25

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.2Ohm @ 1.4A, 10V Through Hole 5V @ 250µA 5.2 nC @ 10 V 250 V ±30V 170 pF @ 25 V - - TO-220-3 - 45W (Tc) -55°C ~ 150°C (TJ)
FQPF7N10L

FQPF7N10L

MOSFET N-CH 100V 5.5A TO220F

Fairchild Semiconductor

5,887 -
FQPF7N10L

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 5V, 10V 350mOhm @ 2.75A, 10V Through Hole 2V @ 250µA 6 nC @ 5 V 100 V ±20V 290 pF @ 25 V - - TO-220F-3 - 23W (Tc) -55°C ~ 175°C (TJ)
HUF76013P3

HUF76013P3

MOSFET N-CH 20V 20A TO220-3

Fairchild Semiconductor

5,326 -
HUF76013P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V Through Hole 3V @ 250µA 17 nC @ 10 V 20 V ±20V 624 pF @ 20 V - - TO-220-3 - 50W (Tc) -55°C ~ 150°C (TJ)
FQP9N08L

FQP9N08L

MOSFET N-CH 80V 9.3A TO220-3

Fairchild Semiconductor

5,169 -
FQP9N08L

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 5V, 10V 210mOhm @ 4.65A, 10V Through Hole 5V @ 250µA 6.1 nC @ 5 V 80 V ±20V 280 pF @ 25 V - - TO-220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
IRFU330BTU

IRFU330BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,090 -
IRFU330BTU

数据表

- TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1Ohm @ 2.25A, 10V Through Hole 4V @ 250µA 33 nC @ 10 V 400 V ±30V 1000 pF @ 25 V - - TO-251 (IPAK) - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
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