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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMS7698

FDMS7698

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

7,000 -
FDMS7698

数据表

PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 13.5A (Ta), 22A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V Surface Mount 3V @ 250µA 24 nC @ 10 V 30 V ±20V 1605 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 29W (Tc) -55°C ~ 150°C (TJ)
FDS6690A-NBNP006

FDS6690A-NBNP006

SINGLE N-CHANNEL, LOGIC LEVEL, P

Fairchild Semiconductor

5,311 -
FDS6690A-NBNP006

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V Surface Mount 3V @ 250µA 16 nC @ 5 V 30 V ±20V 1205 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
FDFS2P753Z

FDFS2P753Z

MOSFET P-CH 30V 3A 8SOIC

Fairchild Semiconductor

389,380 -
FDFS2P753Z

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 3A (Ta) - 115mOhm @ 3A, 10V Surface Mount 3V @ 250µA 9.3 nC @ 10 V 30 V ±25V 455 pF @ 10 V - Schottky Diode (Isolated) 8-SOIC - 1.6W (Ta) -55°C ~ 150°C (TJ)
ISL9N312AD3

ISL9N312AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

209,433 -
ISL9N312AD3

数据表

UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V Through Hole 3V @ 250µA 38 nC @ 10 V 30 V ±20V 1450 pF @ 15 V - - IPAK - 75W (Ta) -55°C ~ 175°C (TJ)
FDZ202P

FDZ202P

MOSFET P-CH 20V 5.5A 12BGA

Fairchild Semiconductor

138,547 -
FDZ202P

数据表

PowerTrench® 12-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 5.5A (Ta) 2.5V, 4.5V 45mOhm @ 5.5A, 4.5V Surface Mount 1.5V @ 250µA 13 nC @ 4.5 V 20 V ±12V 884 pF @ 10 V - - 12-BGA (2x2.5) - 2W (Ta) -55°C ~ 150°C (TJ)
ISL9N312AD3ST

ISL9N312AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

136,310 -
ISL9N312AD3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V Surface Mount 3V @ 250µA 38 nC @ 10 V 30 V ±20V 1450 pF @ 15 V - - TO-252AA - 75W (Ta) -55°C ~ 175°C (TJ)
FDZ493P

FDZ493P

MOSFET P-CH 20V 4.6A 9BGA

Fairchild Semiconductor

45,000 -
FDZ493P

数据表

PowerTrench® 9-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.6A (Ta) 2.5V, 4.5V 46mOhm @ 4.6A, 4.5V Surface Mount 1.5V @ 250µA 11 nC @ 4.5 V 20 V ±12V 754 pF @ 10 V - - 9-BGA (1.55x1.55) - 1.7W (Ta) -55°C ~ 150°C (TJ)
FDFME2P823ZT

FDFME2P823ZT

2.6A, 20V, P-CHANNEL MOSFET

Fairchild Semiconductor

40,000 -
FDFME2P823ZT

数据表

PowerTrench® 6-UFDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 2.6A (Ta) 1.8V, 4.5V 142mOhm @ 2.3A, 4.5V Surface Mount 1V @ 250µA 7.7 nC @ 4.5 V 20 V ±8V 405 pF @ 10 V - Schottky Diode (Isolated) 6-MicroFET (1.6x1.6) - 1.4W (Ta) -55°C ~ 150°C (TJ)
IRFS730B

IRFS730B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

23,487 -
IRFS730B

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 5.5A (Tj) 10V 1Ohm @ 2.75A, 10V Through Hole 4V @ 250µA 33 nC @ 10 V 400 V ±30V 1000 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 150°C (TJ)
FDMC4436BZ

FDMC4436BZ

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

23,228 -
FDMC4436BZ

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
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