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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUFA76419D3STN-CHANNEL LOGIC LEVEL ULTRAFET Fairchild Semiconductor |
921 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 37mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 27.5 nC @ 10 V | 60 V | ±16V | 900 pF @ 25 V | - | - | TO-252AA | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
FQI17P10TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,000 | - |
|
数据表 |
QFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 16.5A (Tc) | 10V | 190mOhm @ 8.25A, 10V | Through Hole | 4V @ 250µA | 39 nC @ 10 V | 100 V | ±30V | 1100 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.75W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
FQU1N60TUMOSFET N-CH 600V 1A IPAK Fairchild Semiconductor |
607 | - |
|
数据表 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1A (Tc) | 10V | 11.5Ohm @ 500mA, 10V | Through Hole | 5V @ 250µA | 6 nC @ 10 V | 600 V | ±30V | 150 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF7N40MOSFET N-CH 400V 4.6A TO220F Fairchild Semiconductor |
552 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.6A (Tc) | 10V | 800mOhm @ 2.3A, 10V | Through Hole | 5V @ 250µA | 22 nC @ 10 V | 400 V | ±30V | 780 pF @ 25 V | - | - | TO-220F-3 | - | 42W (Tc) | -55°C ~ 150°C (TJ) |
|
FQI2N80TUMOSFET N-CH 800V 2.4A I2PAK Fairchild Semiconductor |
550 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.4A (Tc) | 10V | 6.3Ohm @ 900mA, 10V | Through Hole | 5V @ 250µA | 15 nC @ 10 V | 800 V | ±30V | 550 pF @ 25 V | - | - | I2PAK | - | 3.13W (Ta), 85W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF6N40CTMOSFET N-CH 400V 6A TO220F Fairchild Semiconductor |
680 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | Through Hole | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±30V | 625 pF @ 25 V | - | - | TO-220F-3 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
FQB7P06TMMOSFET P-CH 60V 7A D2PAK Fairchild Semiconductor |
549 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 410mOhm @ 3.5A, 10V | Surface Mount | 4V @ 250µA | 8.2 nC @ 10 V | 60 V | ±25V | 295 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.75W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) |
|
FQD6N50CTFMOSFET N-CH 500V 4.5A DPAK Fairchild Semiconductor |
750 | - |
|
数据表 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | Surface Mount | 4V @ 250µA | 25 nC @ 10 V | 500 V | ±30V | 700 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 61W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FQPF19N10MOSFET N-CH 100V 13.6A TO220F Fairchild Semiconductor |
582 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13.6A (Tc) | 10V | 100mOhm @ 6.8A, 10V | Through Hole | 4V @ 250µA | 25 nC @ 10 V | 100 V | ±25V | 780 pF @ 25 V | - | - | TO-220F-3 | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
FDP6030BLPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
800 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | Through Hole | 3V @ 250µA | 17 nC @ 5 V | 30 V | ±20V | 1160 pF @ 15 V | - | - | TO-220-3 | - | 60W (Tc) | -65°C ~ 175°C (TJ) |
