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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDI038AN06A0

FDI038AN06A0

MOSFET N-CH 60V 17A/80A I2PAK

Fairchild Semiconductor

1,432 -
FDI038AN06A0

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V Through Hole 4V @ 250µA 124 nC @ 10 V 60 V ±20V 6400 pF @ 25 V - - TO-262 (I2PAK) - 310W (Tc) -55°C ~ 175°C (TJ)
FCH170N60

FCH170N60

MOSFET N-CH 600V 22A TO247-3

Fairchild Semiconductor

11,671 -
FCH170N60

数据表

SuperFET® II TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 170mOhm @ 11A, 10V Through Hole 3.5V @ 250µA 55 nC @ 10 V 600 V ±20V 2860 pF @ 380 V - - TO-247 - 227W (Tc) -55°C ~ 150°C (TJ)
FCP104N60

FCP104N60

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

129 -
FCP104N60

数据表

SuperFET® II TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 104mOhm @ 18.5A, 10V Through Hole 3.5V @ 250µA 82 nC @ 10 V 600 V ±20V 4165 pF @ 380 V - - TO-220-3 - 357W (Tc) -55°C ~ 150°C (TJ)
FCPF290N80

FCPF290N80

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

7,634 -
FCPF290N80

数据表

PowerTrench® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 290mOhm @ 8.5A, 10V Through Hole 4.5V @ 1.7mA 75 nC @ 10 V 800 V ±20V 3205 pF @ 100 V - - TO-220F - 40W (Tc) -55°C ~ 150°C (TJ)
FCP170N60

FCP170N60

MOSFET N-CH 600V 22A TO220-3

Fairchild Semiconductor

800 -
FCP170N60

数据表

SuperFET® II TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 170mOhm @ 11A, 10V Through Hole 3.5V @ 250µA 55 nC @ 10 V 600 V ±20V 2860 pF @ 380 V - - TO-220-3 - 227W (Tc) -55°C ~ 150°C (TJ)
FCH25N60N

FCH25N60N

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

4,502 -
FCH25N60N

数据表

SupreMOS™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 126mOhm @ 12.5A, 10V Through Hole 4V @ 250µA 74 nC @ 10 V 600 V ±30V 3352 pF @ 100 V - - TO-247 - 216W (Tc) -55°C ~ 150°C (TJ)
FDBL0150N60

FDBL0150N60

FDBL0150N60 - N-CHANNEL POWERTRE

Fairchild Semiconductor

2,380 -
FDBL0150N60

数据表

PowerTrench® 8-PowerSFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 1.5mOhm @ 80A, 10V Surface Mount 4V @ 250µA 169 nC @ 10 V 60 V ±20V 10300 pF @ 30 V - - 8-HPSOF - 357W (Tj) -55°C ~ 175°C (TJ)
FQA44N30

FQA44N30

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

410 -
FQA44N30

数据表

QFET® TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 43.5A (Tc) 10V 69mOhm @ 21.75A, 10V Through Hole 5V @ 250µA 150 nC @ 10 V 300 V ±30V 5600 pF @ 25 V - - TO-3PN - 310W (Tc) -55°C ~ 150°C (TJ)
FDP039N08B-F102

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

Fairchild Semiconductor

399 -
FDP039N08B-F102

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.9mOhm @ 100A, 10V Through Hole 4.5V @ 250µA 133 nC @ 10 V 80 V ±20V 9450 pF @ 40 V - - TO-220-3 - 214W (Tc) -55°C ~ 175°C (TJ)
FCA22N60N

FCA22N60N

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

391 -
FCA22N60N

数据表

SupreMOS™ TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 165mOhm @ 11A, 10V Through Hole 4V @ 250µA 45 nC @ 10 V 600 V ±30V 1950 pF @ 100 V - - TO-3PN - 205W (Tc) -55°C ~ 150°C (TJ)
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