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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FCPF11N60NT

FCPF11N60NT

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

14,218 -
FCPF11N60NT

数据表

SuperMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 10.8A (Tc) 10V 299mOhm @ 5.4A, 10V Through Hole 4V @ 250µA 35.6 nC @ 10 V 600 V ±30V 1505 pF @ 100 V - - TO-220F-3 - 32.1W (Tc) -55°C ~ 150°C (TJ)
NDP708AE

NDP708AE

60A, 80V, 0.022OHM, N-CHANNEL MO

Fairchild Semiconductor

3,240 -
NDP708AE

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDP039N08B

FDP039N08B

N-CHANNEL POWERTRENCH MOSFET 80V

Fairchild Semiconductor

798 -
FDP039N08B

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDB9403L-F085

FDB9403L-F085

MOSFET N-CH 40V 110A D2PAK

Fairchild Semiconductor

3,408 -
FDB9403L-F085

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 1.2mOhm @ 80A, 10V Surface Mount 3V @ 250µA 245 nC @ 10 V 40 V ±20V 13500 pF @ 20 V AEC-Q101 - TO-263 (D2PAK) Automotive 333W (Tj) -55°C ~ 175°C (TJ)
HUFA75645S3S

HUFA75645S3S

MOSFET N-CH 100V 75A D2PAK

Fairchild Semiconductor

1,228 -
HUFA75645S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 14mOhm @ 75A, 10V Surface Mount 4V @ 250µA 238 nC @ 20 V 100 V ±20V 3790 pF @ 25 V - - TO-263 (D2PAK) - 310W (Tc) -55°C ~ 175°C (TJ)
FQA9N90-F109

FQA9N90-F109

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

398 -
FQA9N90-F109

数据表

QFET® TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 8.6A (Tc) 10V 1.3Ohm @ 4.3A, 10V Through Hole 5V @ 250µA 72 nC @ 10 V 900 V ±30V 2700 pF @ 25 V - - TO-3PN - 240W (Tc) -55°C ~ 150°C (TJ)
FCP13N60N

FCP13N60N

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2,341 -
FCP13N60N

数据表

SupreMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 258mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 39.5 nC @ 10 V 600 V ±30V 1765 pF @ 100 V - - TO-220-3 - 116W (Tc) -55°C ~ 150°C (TJ)
FDMS86152

FDMS86152

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

479 -
FDMS86152

数据表

PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 45A (Tc) 6V, 10V 6mOhm @ 14A, 10V Surface Mount 4V @ 250µA 50 nC @ 10 V 100 V ±20V 3370 pF @ 50 V - - 8-PQFN (5x6) - 2.7W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
FDBL86563-F085

FDBL86563-F085

MOSFET N-CH 60V 240A 8HPSOF

Fairchild Semiconductor

22,000 -
FDBL86563-F085

数据表

PowerTrench® 8-PowerSFN Bulk Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 1.5mOhm @ 80A, 10V Surface Mount 4V @ 250µA 169 nC @ 10 V 60 V ±20V 10300 pF @ 30 V AEC-Q101 - 8-HPSOF Automotive 357W (Tj) -55°C ~ 175°C (TJ)
FQAF16N50

FQAF16N50

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

7,560 -
FQAF16N50

数据表

QFET® TO-3P-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 11.3A (Tc) 10V 320mOhm @ 5.65A, 10V Through Hole 5V @ 250µA 75 nC @ 10 V 500 V ±30V 3000 pF @ 25 V - - TO-3PF - 110W (Tc) -55°C ~ 150°C (TJ)
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