Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 117

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FCH041N65F-F085 MOSFET N-CH 650V 76A TO247-3 Fairchild Semiconductor	163	-	询价单	数据表	SuperFET® II	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	76A (Tc)	10V	41mOhm @ 38A, 10V	Through Hole	5V @ 250µA	304 nC @ 10 V	650 V	±20V	13566 pF @ 25 V	AEC-Q101	-	TO-247	Automotive	595W (Tc)	-55°C ~ 150°C (TJ)
FCH041N65EFL4 POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor	232	-	询价单	数据表	FRFET®, SuperFET® II	TO-247-4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	76A (Tc)	10V	41mOhm @ 38A, 10V	Through Hole	5V @ 7.6mA	298 nC @ 10 V	650 V	±20V	12560 pF @ 100 V	-	-	TO-247-4	-	595W (Tc)	-55°C ~ 150°C (TJ)
FCH76N60NF POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	4,950	-	询价单	数据表	SupreMOS™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	72.8A (Tc)	10V	38mOhm @ 38A, 10V	Through Hole	5V @ 250µA	300 nC @ 10 V	600 V	±30V	11045 pF @ 100 V	-	-	TO-247	-	543W (Tc)	-55°C ~ 150°C (TJ)
FQPF6N25 MOSFET N-CH 250V 4A TO220F Fairchild Semiconductor	948	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1Ohm @ 2A, 10V	Through Hole	5V @ 250µA	8.5 nC @ 10 V	250 V	±30V	300 pF @ 25 V	-	-	TO-220F-3	-	37W (Tc)	-55°C ~ 150°C (TJ)
HUF75925D3ST MOSFET N-CH 200V 11A TO252AA Fairchild Semiconductor	1,000	-	询价单	数据表	UltraFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	275mOhm @ 11A, 10V	Surface Mount	4V @ 250µA	78 nC @ 20 V	200 V	±20V	1030 pF @ 25 V	-	-	TO-252 (DPAK)	-	100W (Tc)	-55°C ~ 175°C (TJ)
SSI7N60BTU N-CHANNEL POWER MOSFET Fairchild Semiconductor	964	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	1.2Ohm @ 3.5A, 10V	Through Hole	4V @ 250µA	50 nC @ 10 V	600 V	±30V	1800 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 147W (Tc)	-55°C ~ 150°C (TJ)
FQP19N10L MOSFET N-CH 100V 19A TO220-3 Fairchild Semiconductor	970	-	询价单	数据表	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	5V, 10V	100mOhm @ 9.5A, 10V	Through Hole	2V @ 250µA	18 nC @ 5 V	100 V	±20V	870 pF @ 25 V	-	-	TO-220-3	-	75W (Tc)	-55°C ~ 175°C (TJ)
FQPF8P10 MOSFET P-CH 100V 5.3A TO220F Fairchild Semiconductor	860	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.3A (Tc)	10V	530mOhm @ 2.65A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	100 V	±30V	470 pF @ 25 V	-	-	TO-220F-3	-	28W (Tc)	-55°C ~ 175°C (TJ)
FQPF4N90 MOSFET N-CH 900V 2.5A TO220F Fairchild Semiconductor	744	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3.3Ohm @ 1.25A, 10V	Through Hole	5V @ 250µA	30 nC @ 10 V	900 V	±30V	1100 pF @ 25 V	-	-	TO-220F-3	-	47W (Tc)	-55°C ~ 150°C (TJ)
IRFW620BTM N-CHANNEL POWER MOSFET Fairchild Semiconductor	933	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	800mOhm @ 2.5A, 10V	Surface Mount	4V @ 250µA	16 nC @ 10 V	200 V	±30V	390 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 47W (Tc)	-55°C ~ 150°C (TJ)

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