Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 120

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HUFA76639P3 MOSFET N-CH 100V 51A TO220-3 Fairchild Semiconductor	973	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	4.5V, 10V	26mOhm @ 51A, 10V	Through Hole	3V @ 250µA	86 nC @ 10 V	100 V	±16V	2400 pF @ 25 V	-	-	TO-220-3	-	180W (Tc)	-55°C ~ 175°C (TJ)
FQI15P12TU MOSFET P-CH 120V 15A I2PAK Fairchild Semiconductor	901	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	200mOhm @ 7.5A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	120 V	±30V	1100 pF @ 25 V	-	-	I2PAK (TO-262)	-	3.75W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
SSP45N20A 35A, 200V, 0.065OHM, N-CHANNEL M Fairchild Semiconductor	519	-	询价单	数据表	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	65mOhm @ 17.5A, 10V	Through Hole	4V @ 250µA	152 nC @ 10 V	200 V	±30V	3940 pF @ 25 V	-	-	TO-220-3	-	175W (Tc)	-55°C ~ 150°C (TJ)
FQPF6N50C 3.6A, 500V, N-CHANNEL, MOSFET Fairchild Semiconductor	1,000	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF76143S3ST N-CHANNEL POWER MOSFET Fairchild Semiconductor	706	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	5.5mOhm @ 75A, 10V	Surface Mount	3V @ 250µA	114 nC @ 10 V	30 V	±20V	3900 pF @ 25 V	-	-	TO-263AB	-	225W (Tc)	-40°C ~ 150°C (TJ)
FQB16N15TM MOSFET N-CH 150V 16.4A D2PAK Fairchild Semiconductor	959	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	16.4A (Tc)	10V	160mOhm @ 8.2A, 10V	Surface Mount	4V @ 250µA	30 nC @ 10 V	150 V	±25V	910 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.75W (Ta), 108W (Tc)	-55°C ~ 175°C (TJ)
FQP2N80 MOSFET N-CH 800V 2.4A TO220-3 Fairchild Semiconductor	900	-	询价单	数据表	QFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.4A (Tc)	10V	6.3Ohm @ 1.2A, 10V	Through Hole	5V @ 250µA	15 nC @ 10 V	800 V	±30V	550 pF @ 25 V	-	-	TO-220-3	-	85W (Tc)	-55°C ~ 150°C (TJ)
SSW7N60BTM N-CHANNEL POWER MOSFET Fairchild Semiconductor	697	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	1.2Ohm @ 3.5A, 10V	Surface Mount	4V @ 250µA	50 nC @ 10 V	600 V	±30V	1800 pF @ 25 V	-	-	D2PAK	-	3.13W (Ta), 147W (Tc)	-55°C ~ 150°C (TJ)
SFI9510TU P-CHANNEL POWER MOSFET Fairchild Semiconductor	950	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	10V	1.2Ohm @ 1.8A, 10V	Through Hole	4V @ 250µA	10 nC @ 10 V	100 V	±30V	335 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.8W (Ta), 32W (Tc)	-55°C ~ 175°C (TJ)
FQB5N60TM MOSFET N-CH 600V 5A D2PAK Fairchild Semiconductor	910	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	2Ohm @ 2.5A, 10V	Surface Mount	5V @ 250µA	20 nC @ 10 V	600 V	±30V	730 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 120W (Tc)	-55°C ~ 150°C (TJ)

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