| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFW630BTM_FP0019A, 200V, 0.4OHM, N-CHANNEL Fairchild Semiconductor |
800 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | Surface Mount | 4V @ 250µA | 29 nC @ 10 V | 200 V | ±30V | 720 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.13W (Ta), 72W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFW520ATMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
774 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9.2A (Tc) | 10V | 200mOhm @ 4.6A, 10V | Surface Mount | 4V @ 250µA | 22 nC @ 10 V | 100 V | ±20V | 480 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) |
|
FDD8880_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
777 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 58A (Tc) | 4.5V, 10V | 9mOhm @ 35A, 10V | Surface Mount | 2.5V @ 250µA | 31 nC @ 10 V | 30 V | ±20V | 1260 pF @ 15 V | - | - | TO-252 (DPAK) | - | 55W (Tc) | -55°C ~ 175°C (TJ) |
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FQPF5N30MOSFET N-CH 300V 3.9A TO220F Fairchild Semiconductor |
1,000 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.9A (Tc) | 10V | 900mOhm @ 1.95A, 10V | Through Hole | 5V @ 250µA | 13 nC @ 10 V | 300 V | ±30V | 430 pF @ 25 V | - | - | TO-220F-3 | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
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SFI9630TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
691 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 800mOhm @ 3.3A, 10V | Through Hole | 4V @ 250µA | 36 nC @ 10 V | 200 V | ±30V | 956 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.1W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) |
|
RF1K49157N-CHANNEL POWER MOSFET Fairchild Semiconductor |
960 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6.3A (Ta) | 4.5V, 10V | 30mOhm @ 6.3A, 10V | Surface Mount | 3V @ 250µA | 88 nC @ 20 V | 30 V | ±20V | 1575 pF @ 25 V | - | - | 8-SOIC | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
SFS9640POWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
920 | - |
|
数据表 |
- | TO-220-3 Full Pack | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | 10V | 500mOhm @ 3.1A, 10V | Through Hole | 4V @ 250µA | 59 nC @ 10 V | 200 V | ±30V | 1585 pF @ 25 V | - | - | TO-220F | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
RFD16N05NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
776 | - |
|
数据表 |
PSPICE® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 80 nC @ 20 V | 50 V | ±20V | 900 pF @ 25 V | - | - | IPAK | - | 72W (Tc) | -55°C ~ 175°C (TJ) |
|
|
FQI32N12V2TUMOSFET N-CH 120V 32A I2PAK Fairchild Semiconductor |
592 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 53 nC @ 10 V | 120 V | ±30V | 1860 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) |
|
FQPF9N25MOSFET N-CH 250V 6.7A TO220F Fairchild Semiconductor |
600 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.7A (Tc) | 10V | 420mOhm @ 3.35A, 10V | Through Hole | 5V @ 250µA | 20 nC @ 10 V | 250 V | ±30V | 700 pF @ 25 V | - | - | TO-220F-3 | - | 45W (Tc) | -55°C ~ 150°C (TJ) |