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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFW630BTM_FP001

IRFW630BTM_FP001

9A, 200V, 0.4OHM, N-CHANNEL

Fairchild Semiconductor

800 -
IRFW630BTM_FP001

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 400mOhm @ 4.5A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 200 V ±30V 720 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 72W (Tc) -55°C ~ 150°C (TJ)
IRFW520ATM

IRFW520ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

774 -
IRFW520ATM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 9.2A (Tc) 10V 200mOhm @ 4.6A, 10V Surface Mount 4V @ 250µA 22 nC @ 10 V 100 V ±20V 480 pF @ 25 V - - D2PAK - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
FDD8880_NL

FDD8880_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

777 -
FDD8880_NL

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 58A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 31 nC @ 10 V 30 V ±20V 1260 pF @ 15 V - - TO-252 (DPAK) - 55W (Tc) -55°C ~ 175°C (TJ)
FQPF5N30

FQPF5N30

MOSFET N-CH 300V 3.9A TO220F

Fairchild Semiconductor

1,000 -
FQPF5N30

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.9A (Tc) 10V 900mOhm @ 1.95A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 300 V ±30V 430 pF @ 25 V - - TO-220F-3 - 35W (Tc) -55°C ~ 150°C (TJ)
SFI9630TU

SFI9630TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

691 -
SFI9630TU

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 800mOhm @ 3.3A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 200 V ±30V 956 pF @ 25 V - - TO-262 (I2PAK) - 3.1W (Ta), 70W (Tc) -55°C ~ 150°C (TJ)
RF1K49157

RF1K49157

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

960 -
RF1K49157

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta) 4.5V, 10V 30mOhm @ 6.3A, 10V Surface Mount 3V @ 250µA 88 nC @ 20 V 30 V ±20V 1575 pF @ 25 V - - 8-SOIC - 2W (Ta) -55°C ~ 150°C (TJ)
SFS9640

SFS9640

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

920 -
SFS9640

数据表

- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 500mOhm @ 3.1A, 10V Through Hole 4V @ 250µA 59 nC @ 10 V 200 V ±30V 1585 pF @ 25 V - - TO-220F - 40W (Tc) -55°C ~ 150°C (TJ)
RFD16N05NL

RFD16N05NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

776 -
RFD16N05NL

数据表

PSPICE® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 47mOhm @ 16A, 10V Through Hole 4V @ 250µA 80 nC @ 20 V 50 V ±20V 900 pF @ 25 V - - IPAK - 72W (Tc) -55°C ~ 175°C (TJ)
FQI32N12V2TU

FQI32N12V2TU

MOSFET N-CH 120V 32A I2PAK

Fairchild Semiconductor

592 -
FQI32N12V2TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 50mOhm @ 16A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 120 V ±30V 1860 pF @ 25 V - - TO-262 (I2PAK) - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
FQPF9N25

FQPF9N25

MOSFET N-CH 250V 6.7A TO220F

Fairchild Semiconductor

600 -
FQPF9N25

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.7A (Tc) 10V 420mOhm @ 3.35A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 250 V ±30V 700 pF @ 25 V - - TO-220F-3 - 45W (Tc) -55°C ~ 150°C (TJ)
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