Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 121

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HUF75631SK8T_NB82083 N CHANNEL ULTRAFET 100V, 33A, 4 Fairchild Semiconductor	651	-	询价单	数据表	UltraFET®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Ta)	10V	39mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	79 nC @ 20 V	100 V	±20V	1225 pF @ 25 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
SSS10N60B N-CHANNEL POWER MOSFET Fairchild Semiconductor	470	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tj)	10V	800mOhm @ 4.5A, 10V	Through Hole	4V @ 250µA	70 nC @ 10 V	600 V	±30V	2700 pF @ 25 V	-	-	TO-220F-3	-	50W (Tc)	-55°C ~ 150°C (TJ)
FDU6512A MOSFET N-CH 20V 10.7A/36A IPAK Fairchild Semiconductor	834	-	询价单	数据表	PowerTrench®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.7A (Ta), 36A (Tc)	2.5V, 4.5V	21mOhm @ 10.7A, 4.5V	Through Hole	1.5V @ 250µA	19 nC @ 4.5 V	20 V	±12V	1082 pF @ 10 V	-	-	IPAK	-	3.8W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
SFP9640L MOSFET P-CH 200V 11A TO220-3 Fairchild Semiconductor	760	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	5V	500mOhm @ 5.5A, 5V	Through Hole	2V @ 250µA	59 nC @ 5 V	200 V	±20V	1585 pF @ 25 V	-	-	TO-220-3	-	98W (Tc)	-55°C ~ 150°C (TJ)
HUFA75343P3 MOSFET N-CH 55V 75A TO220-3 Fairchild Semiconductor	643	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	9mOhm @ 75A, 10V	Through Hole	4V @ 250µA	205 nC @ 20 V	55 V	±20V	3000 pF @ 25 V	-	-	TO-220-3	-	270W (Tc)	-55°C ~ 175°C (TJ)
FQI2P25TU MOSFET P-CH 250V 2.3A I2PAK Fairchild Semiconductor	1,000	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.3A (Tc)	10V	4Ohm @ 1.15A, 10V	Through Hole	5V @ 250µA	8.5 nC @ 10 V	250 V	±30V	250 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
FQI3P20TU MOSFET P-CH 200V 2.8A I2PAK Fairchild Semiconductor	1,000	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	2.7Ohm @ 1.4A, 10V	Through Hole	5V @ 250µA	8 nC @ 10 V	200 V	±30V	250 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
FQB16N25CTM MOSFET N-CH 250V 15.6A D2PAK Fairchild Semiconductor	845	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	15.6A (Tc)	10V	270mOhm @ 7.8A, 10V	Surface Mount	4V @ 250µA	53.5 nC @ 10 V	250 V	±30V	1080 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 139W (Tc)	-55°C ~ 150°C (TJ)
NDB7052L N-CHANNEL POWER MOSFET Fairchild Semiconductor	800	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	5V, 10V	7.5mOhm @ 37.5A, 10V	Through Hole	2V @ 250µA	130 nC @ 5 V	50 V	±16V	4030 pF @ 25 V	-	-	TO-220-3	-	150W (Tc)	-65°C ~ 175°C (TJ)
FQAF44N08 MOSFET N-CH 80V 35.6A TO3PF Fairchild Semiconductor	720	-	询价单	数据表	QFET®	TO-3P-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	35.6A (Tc)	10V	34mOhm @ 17.8A, 10V	Through Hole	4V @ 250µA	50 nC @ 10 V	80 V	±25V	1430 pF @ 25 V	-	-	TO-3PF	-	83W (Tc)	-55°C ~ 175°C (TJ)

共 1251 条记录«上一页 1... 117 118 119 120121122 123 124...126 下一页»