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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQAF19N20

FQAF19N20

MOSFET N-CH 200V 15A TO3PF

Fairchild Semiconductor

684 -
FQAF19N20

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 150mOhm @ 7.5A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 200 V ±30V 1600 pF @ 25 V - - TO-3PF - 85W (Tc) -55°C ~ 150°C (TJ)
FQPF5N80

FQPF5N80

MOSFET N-CH 800V 2.8A TO220F

Fairchild Semiconductor

610 -
FQPF5N80

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.6Ohm @ 1.4A, 10V Through Hole 5V @ 250µA 33 nC @ 10 V 800 V ±30V 1250 pF @ 25 V - - TO-220F-3 - 47W (Tc) -55°C ~ 150°C (TJ)
FQI5N80TU

FQI5N80TU

MOSFET N-CH 800V 4.8A I2PAK

Fairchild Semiconductor

993 -
FQI5N80TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 2.6Ohm @ 2.4A, 10V Through Hole 5V @ 250µA 33 nC @ 10 V 800 V ±30V 1250 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ)
SSS6N70A

SSS6N70A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

950 -
SSS6N70A

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.8Ohm @ 2A, 10V Through Hole 4V @ 250µA 67 nC @ 10 V 700 V ±30V 1200 pF @ 25 V - - TO-220F - 40W (Tc) -55°C ~ 150°C (TJ)
FQAF28N15

FQAF28N15

MOSFET N-CH 150V 22A TO3PF

Fairchild Semiconductor

473 -
FQAF28N15

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 90mOhm @ 11A, 10V Through Hole 4V @ 250µA 52 nC @ 10 V 150 V ±25V 1600 pF @ 25 V - - TO-3PF - 102W (Tc) -55°C ~ 175°C (TJ)
FQPF4N80

FQPF4N80

MOSFET N-CH 800V 2.2A TO220F

Fairchild Semiconductor

334 -
FQPF4N80

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V Through Hole 5V @ 250µA 25 nC @ 10 V 800 V ±30V 880 pF @ 25 V - - TO-220F-3 - 43W (Tc) -55°C ~ 150°C (TJ)
FQAF16N25

FQAF16N25

MOSFET N-CH 250V 12.4A TO3PF

Fairchild Semiconductor

682 -
FQAF16N25

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 12.4A (Tc) 10V 230mOhm @ 6.2A, 10V Through Hole 5V @ 250µA 35 nC @ 10 V 250 V ±30V 1200 pF @ 25 V - - TO-3PF - 85W (Tc) -55°C ~ 150°C (TJ)
FQAF16N25C

FQAF16N25C

MOSFET N-CH 250V 11.4A TO3PF

Fairchild Semiconductor

360 -
FQAF16N25C

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 270mOhm @ 5.7A, 10V Through Hole 4V @ 250µA 53.5 nC @ 10 V 250 V ±30V 1080 pF @ 25 V - - TO-3PF - 73W (Tc) -55°C ~ 150°C (TJ)
HUFA75545P3

HUFA75545P3

MOSFET N-CH 80V 75A TO220-3

Fairchild Semiconductor

345 -
HUFA75545P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 10mOhm @ 75A, 10V Through Hole 4V @ 250µA 235 nC @ 20 V 80 V ±20V 3750 pF @ 25 V - - TO-220-3 - 270W (Tc) -55°C ~ 175°C (TJ)
FQB55N06TM

FQB55N06TM

MOSFET N-CH 60V 55A D2PAK

Fairchild Semiconductor

696 -
FQB55N06TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 20mOhm @ 27.5A, 10V Surface Mount 4V @ 250µA 46 nC @ 10 V 60 V ±25V 1690 pF @ 25 V - - TO-263 (D2PAK) - 3.75W (Ta), 133W (Tc) -55°C ~ 175°C (TJ)
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