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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUF75542P3POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
1,690 | - |
|
数据表 |
UltraFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 180 nC @ 20 V | 80 V | ±20V | 2750 pF @ 25 V | - | - | TO-220-3 | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
|
FCP11N60NPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
800 | - |
|
数据表 |
SupreMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10.8A (Tc) | 10V | 299mOhm @ 5.4A, 10V | Through Hole | 4V @ 250µA | 35.6 nC @ 10 V | 600 V | ±30V | 1505 pF @ 100 V | - | - | TO-220-3 | - | 94W (Tc) | -55°C ~ 150°C (TJ) |
|
FDA18N50POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
1,564 | - |
|
数据表 |
UniFET™ | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 265mOhm @ 9.5A, 10V | Through Hole | 5V @ 250µA | 60 nC @ 10 V | 500 V | ±30V | 2860 pF @ 25 V | - | - | TO-3PN | - | 239W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FQP12N60CPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
4,340 | - |
|
数据表 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 63 nC @ 10 V | 600 V | ±30V | 2290 pF @ 25 V | - | - | TO-220-3 | - | 225W (Tc) | -55°C ~ 150°C (TJ) |
|
FCPF260N60EPOWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor |
190 | - |
|
数据表 |
SuperFET® II | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 260mOhm @ 7.5A, 10V | Through Hole | 3.5V @ 250µA | 62 nC @ 10 V | 600 V | ±20V | 2500 pF @ 25 V | - | - | TO-220F-3 | - | 36W (Tc) | -55°C ~ 150°C (TJ) |
|
FQB25N33TM-F085MOSFET N-CH 330V 25A D2PAK Fairchild Semiconductor |
8,000 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 230mOhm @ 12.5A, 10V | Surface Mount | 5V @ 250µA | 75 nC @ 15 V | 330 V | ±30V | 2010 pF @ 25 V | AEC-Q101 | - | TO-263 (D2PAK) | Automotive | 3.1W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FDP100N10POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
2,970 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 10mOhm @ 75A, 10V | Through Hole | 4.5V @ 250µA | 100 nC @ 10 V | 100 V | ±20V | 7300 pF @ 25 V | - | - | TO-220-3 | - | 208W (Tc) | -55°C ~ 175°C (TJ) |
|
FDPF51N25YDTUMOSFET N-CH 250V 51A TO220F-3 Fairchild Semiconductor |
566 | - |
|
数据表 |
UniFET™ | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 60mOhm @ 25.5A, 10V | Through Hole | 5V @ 250µA | 70 nC @ 10 V | 250 V | ±30V | 3410 pF @ 25 V | - | - | TO-220F-3 (Y-Forming) | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
FCP165N65S3R0FCP165N65S3R0 - POWER MOSFET, N- Fairchild Semiconductor |
2,115 | - |
|
数据表 |
SuperFET® III | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | Through Hole | 4.5V @ 440mA | 39 nC @ 10 V | 650 V | ±30V | 1500 pF @ 400 V | - | - | TO-220-3 | - | 154W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF75631S3STMOSFET N-CH 100V 33A D2PAK Fairchild Semiconductor |
247 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 40mOhm @ 33A, 10V | Surface Mount | 4V @ 250µA | 79 nC @ 20 V | 100 V | ±20V | 1220 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 120W (Tc) | -55°C ~ 175°C (TJ) |
