Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 113

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FQPF11N50CF POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	1,000	-	询价单	数据表	FRFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	550mOhm @ 5.5A, 10V	Through Hole	4V @ 250µA	55 nC @ 10 V	500 V	±30V	2055 pF @ 25 V	-	-	TO-220F-3	-	48W (Tc)	-55°C ~ 150°C (TJ)
FDMS8320LDC N-CHANNEL DUAL COOLTM 56 POWER T Fairchild Semiconductor	41,418	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDA16N50LDTU POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor	28,520	-	询价单	数据表	-	TO-3P-3, SC-65-3, Formed Leads	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16.5A (Tc)	10V	380mOhm @ 8.3A, 10V	Through Hole	5V @ 250µA	45 nC @ 10 V	500 V	±30V	1945 pF @ 25 V	-	-	TO-3PN (L-Forming)	-	205W (Tc)	-55°C ~ 150°C (TJ)
FQI27N25TU MOSFET N-CH 250V 25.5A I2PAK Fairchild Semiconductor	600	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25.5A (Tc)	10V	110mOhm @ 12.75A, 10V	Through Hole	5V @ 250µA	65 nC @ 10 V	250 V	±30V	2450 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 180W (Tc)	-55°C ~ 150°C (TJ)
FDP39N20 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	500	-	询价单	数据表	UniFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	10V	66mOhm @ 19.5A, 10V	Through Hole	5V @ 250µA	49 nC @ 10 V	200 V	±30V	2130 pF @ 25 V	-	-	TO-220-3	-	251W (Tc)	-55°C ~ 150°C (TJ)
FDP8441 POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	14,407	-	询价单	数据表	PowerTrench®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	23A (Ta), 80A (Tc)	10V	2.7mOhm @ 80A, 10V	Through Hole	4V @ 250µA	280 nC @ 10 V	40 V	±20V	15000 pF @ 25 V	-	-	TO-220-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
FDZ375P MOSFET P-CH 20V 3.7A 4WLCSP Fairchild Semiconductor	4,885	-	询价单	数据表	PowerTrench®	4-XFBGA, WLCSP	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.7A (Ta)	1.5V, 4.5V	78mOhm @ 2A, 4.5V	Surface Mount	1.2V @ 250µA	15 nC @ 4.5 V	20 V	±8V	865 pF @ 10 V	-	-	4-WLCSP (1x1)	-	1.7W (Ta)	-55°C ~ 150°C (TJ)
FCP260N60E POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor	1,000	-	询价单	数据表	SuperFET® II	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	260mOhm @ 7.5A, 10V	Through Hole	3.5V @ 250µA	62 nC @ 10 V	600 V	±20V	2500 pF @ 25 V	-	-	TO-220-3	-	156W (Tc)	-55°C ~ 150°C (TJ)
FCP9N60N MOSFET N-CH 600V 9A TO220-3 Fairchild Semiconductor	25,380	-	询价单	数据表	SuperMOS™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	385mOhm @ 4.5A, 10V	Through Hole	4V @ 250µA	29 nC @ 10 V	600 V	±30V	1240 pF @ 100 V	-	-	TO-220-3	-	83.3W (Tc)	-55°C ~ 150°C (TJ)
FCPF11N60 POWER MOSFET, N-CHANNEL, SUPERFE Fairchild Semiconductor	461	-	询价单	数据表	SuperFET™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	380mOhm @ 5.5A, 10V	Through Hole	5V @ 250µA	52 nC @ 10 V	600 V	±30V	1490 pF @ 25 V	-	-	TO-220F-3	-	36W (Tc)	-55°C ~ 150°C (TJ)

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