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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDP8442-F085POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
750 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Ta), 80A (Tc) | 10V | 3.1mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 235 nC @ 10 V | 40 V | ±20V | 12200 pF @ 25 V | AEC-Q101 | - | TO-220-3 | Automotive | 254W (Tc) | -55°C ~ 175°C (TJ) |
|
FCPF9N60NTPOWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
1,700 | - |
|
数据表 |
SuperMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | Through Hole | 4V @ 250µA | 29 nC @ 10 V | 600 V | ±30V | 1240 pF @ 100 V | - | - | TO-220F-3 | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) |
|
FCP380N60EMOSFET N-CH 600V 10.2A TO220-3 Fairchild Semiconductor |
25,166 | - |
|
数据表 |
SuperFET® II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | Through Hole | 3.5V @ 250µA | 45 nC @ 10 V | 600 V | ±20V | 1770 pF @ 25 V | - | - | TO-220-3 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
|
FQI13N50CTUPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
13,185 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | Through Hole | 4V @ 250µA | 56 nC @ 10 V | 500 V | ±30V | 2055 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 195W (Tc) | -55°C ~ 150°C (TJ) |
|
|
HUF75545P3N-CHANNEL ULTRAFET POWER MOSFET Fairchild Semiconductor |
900 | - |
|
数据表 |
UltraFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 10mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 235 nC @ 20 V | 80 V | ±20V | 3750 pF @ 25 V | - | - | TO-220-3 | - | 270W (Tc) | -55°C ~ 175°C (TJ) |
|
FQI7N60TUPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
1,000 | - |
|
数据表 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | Through Hole | 5V @ 250µA | 38 nC @ 10 V | 600 V | ±30V | 1430 pF @ 25 V | - | - | I2PAK (TO-262) | - | 3.13W (Ta), 142W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FQPF5N90POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
450 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 2.3Ohm @ 1.5A, 10V | Through Hole | 5V @ 250µA | 40 nC @ 10 V | 900 V | ±30V | 1550 pF @ 25 V | - | - | TO-220F-3 | - | 51W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FCPF380N60POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
2,934 | - |
|
数据表 |
SuperFET® II | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | Through Hole | 3.5V @ 250µA | 40 nC @ 10 V | 600 V | ±20V | 1665 pF @ 25 V | - | - | TO-220F-3 | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
|
FDMC7570SPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
4,336 | - |
|
数据表 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | Surface Mount | 3V @ 1mA | 68 nC @ 10 V | 25 V | ±20V | 4410 pF @ 13 V | - | - | Power33 | - | 2.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) |
|
FCPF2250N80ZMOSFET N-CH 800V 2.6A TO220F Fairchild Semiconductor |
360 | - |
|
数据表 |
SuperFET® II | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2.6A (Tc) | 10V | 2.25Ohm @ 1.3A, 10V | Through Hole | 4.5V @ 260µA | 14 nC @ 10 V | 800 V | ±20V | 585 pF @ 100 V | - | - | TO-220F-3 | - | 21.9W (Tc) | -55°C ~ 150°C (TJ) |
