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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQPF8N80CYDTU

FQPF8N80CYDTU

MOSFET N-CH 800V 8A TO220F-3

Fairchild Semiconductor

417 -
FQPF8N80CYDTU

数据表

- TO-220-3 Full Pack, Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.55Ohm @ 4A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 800 V ±30V 2050 pF @ 25 V - - TO-220F-3 (Y-Forming) - 59W (Tc) -55°C ~ 150°C (TJ)
FCPF260N65FL1

FCPF260N65FL1

MOSFET N-CH 650V 15A TO220F

Fairchild Semiconductor

2,000 -
FCPF260N65FL1

数据表

FRFET®, SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 260mOhm @ 7.5A, 10V Through Hole 5V @ 1.5mA 60 nC @ 10 V 650 V ±20V 2340 pF @ 100 V - - TO-220F-3 - 36W (Tc) -55°C ~ 150°C (TJ)
FQPF6N80T

FQPF6N80T

MOSFET N-CH 800V 3.3A TO220F

Fairchild Semiconductor

3,715 -
FQPF6N80T

数据表

QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 3.3A (Tc) 10V 1.95Ohm @ 1.65A, 10V Through Hole 5V @ 250µA 31 nC @ 10 V 800 V ±30V 1500 pF @ 25 V - - TO-220F-3 - 51W (Tc) -55°C ~ 150°C (TJ)
FQPF8N90C

FQPF8N90C

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

2,796 -
FQPF8N90C

数据表

QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 900 V ±30V 2080 pF @ 25 V - - TO-220F - 60W (Tc) -55°C ~ 150°C (TJ)
FDPF44N25TRDTU

FDPF44N25TRDTU

MOSFET N-CH 250V 44A TO220F

Fairchild Semiconductor

800 -
FDPF44N25TRDTU

数据表

UniFET™ TO-220-3 Full Pack, Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 69mOhm @ 22A, 10V Through Hole 5V @ 250µA 61 nC @ 10 V 250 V ±30V 2870 pF @ 25 V - - TO-220F (LG-Formed) - 38W (Tc) -55°C ~ 150°C (TJ)
FQB27N25TM-F085

FQB27N25TM-F085

FQB27N25 - N-CHANNEL ULTRAFET 25

Fairchild Semiconductor

5,600 -
FQB27N25TM-F085

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 25.5A (Tc) 10V 131mOhm @ 25.5A, 10V Surface Mount 5V @ 250µA 49 nC @ 10 V 250 V ±30V 1800 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 417W (Tc) -55°C ~ 150°C (TJ)
FDI9406-F085

FDI9406-F085

FDI9406 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor

5,600 -
FDI9406-F085

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 2.2mOhm @ 80A, 10V Through Hole 4V @ 250µA 138 nC @ 10 V 40 V ±20V 7710 pF @ 25 V AEC-Q101 - I2PAK (TO-262) Automotive 176W (Tj) -55°C ~ 175°C (TJ)
FDPF16N50UT

FDPF16N50UT

MOSFET N-CH 500V 15A TO220F

Fairchild Semiconductor

373 -
FDPF16N50UT

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 480mOhm @ 7.5A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 500 V ±30V 1945 pF @ 25 V - - TO-220F-3 - 38.5W (Tc) -55°C ~ 150°C (TJ)
FQPF10N50CF

FQPF10N50CF

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

67,211 -
FQPF10N50CF

数据表

FRFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 610mOhm @ 5A, 10V Through Hole 4V @ 250µA 56 nC @ 10 V 500 V ±30V 2096 pF @ 25 V - - TO-220F-3 - 48W (Tc) -55°C ~ 150°C (TJ)
FCPF165N65S3R0L

FCPF165N65S3R0L

FCPF165N65S3R0L - POWER MOSFET,

Fairchild Semiconductor

11,630 -
FCPF165N65S3R0L

数据表

SuperFET® III TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 165mOhm @ 9.5A, 10V Through Hole 4.5V @ 410µA 35 nC @ 10 V 650 V ±30V 1415 pF @ 400 V - - TO-220F-3 - 35W (Tc) -55°C ~ 150°C (TJ)
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