Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 110

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FDI9409-F085 FDI9409 - N-CHANNEL POWERTRENCH Fairchild Semiconductor	1,600	-	询价单	数据表	PowerTrench®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	3.8mOhm @ 80A, 10V	Through Hole	4V @ 250µA	56 nC @ 10 V	40 V	±20V	2980 pF @ 25 V	AEC-Q101	-	I2PAK (TO-262)	Automotive	94W (Tj)	-55°C ~ 175°C (TJ)
FDPF041N06BL1 MOSFET N-CH 60V 77A TO220F Fairchild Semiconductor	315	-	询价单	数据表	PowerTrench®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	10V	4.1mOhm @ 77A, 10V	Through Hole	4V @ 250µA	69 nC @ 10 V	60 V	±20V	5690 pF @ 30 V	-	-	TO-220F-3	-	44.1W (Tc)	-55°C ~ 175°C (TJ)
FCP600N60Z POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor	781	-	询价单	数据表	SuperFET® II	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7.4A (Tc)	10V	600mOhm @ 3.7A, 10V	Through Hole	3.5V @ 250µA	26 nC @ 10 V	600 V	±20V	1120 pF @ 25 V	-	-	TO-220-3	-	89W (Tc)	-55°C ~ 150°C (TJ)
FDP070AN06A0 MOSFET N-CH 60V 15A/80A TO220-3 Fairchild Semiconductor	746	-	询价单	数据表	PowerTrench®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 80A (Tc)	10V	7mOhm @ 80A, 10V	Through Hole	4V @ 250µA	66 nC @ 10 V	60 V	±20V	3000 pF @ 25 V	-	-	TO-220-3	-	175W (Tc)	-55°C ~ 175°C (TJ)
FCU850N80Z POWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor	1,000	-	询价单	数据表	SuperFET® II	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	850mOhm @ 3A, 10V	Through Hole	4.5V @ 600µA	29 nC @ 10 V	800 V	±20V	1315 pF @ 100 V	-	-	IPAK	-	75W (Tc)	-55°C ~ 150°C (TJ)
FQI8N60CTU POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	6,000	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7.5A (Tc)	10V	1.2Ohm @ 3.75A, 10V	Through Hole	4V @ 250µA	36 nC @ 10 V	600 V	±30V	1255 pF @ 25 V	-	-	I2PAK (TO-262)	-	3.13W (Ta), 147W (Tc)	-55°C ~ 150°C (TJ)
FQI4N90TU POWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor	1,502	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.2A (Tc)	10V	3.3Ohm @ 2.1A, 10V	Through Hole	5V @ 250µA	30 nC @ 10 V	900 V	±30V	1100 pF @ 25 V	-	-	I2PAK (TO-262)	-	3.13W (Ta), 140W (Tc)	-55°C ~ 150°C (TJ)
HUFA75433S3ST 64A, 60V, 0.016OHM, N-CHANNEL MO Fairchild Semiconductor	520	-	询价单	数据表	UltraFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	10V	16mOhm @ 64A, 10V	Surface Mount	4V @ 250µA	117 nC @ 20 V	60 V	±20V	1550 pF @ 25 V	-	-	TO-263 (D2PAK)	-	150W (Tc)	-55°C ~ 175°C (TJ)
FDD6688 MOSFET N-CH 30V 84A DPAK Fairchild Semiconductor	131,976	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	84A (Ta)	4.5V, 10V	5mOhm @ 18A, 10V	Surface Mount	3V @ 250µA	56 nC @ 10 V	30 V	±20V	3845 pF @ 15 V	-	-	TO-252 (DPAK)	-	83W (Ta)	-55°C ~ 175°C (TJ)
FQPF7N80C POWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor	1,000	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	6.6A (Tc)	10V	1.9Ohm @ 3.3A, 10V	Through Hole	5V @ 250µA	35 nC @ 10 V	800 V	±30V	1680 pF @ 25 V	-	-	TO-220F-3	-	56W (Tc)	-55°C ~ 150°C (TJ)

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