Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 109

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FQI4N80TU MOSFET N-CH 800V 3.9A I2PAK Fairchild Semiconductor	1,550	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.9A (Tc)	10V	3.6Ohm @ 1.95A, 10V	Through Hole	5V @ 250µA	25 nC @ 10 V	800 V	±30V	880 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 130W (Tc)	-55°C ~ 150°C (TJ)
FDD8444 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	310	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	145A (Tc)	10V	5.2mOhm @ 50A, 10V	Surface Mount	4V @ 250µA	116 nC @ 10 V	40 V	±20V	6195 pF @ 25 V	-	-	TO-252 (DPAK)	-	153W (Tc)	-55°C ~ 175°C (TJ)
FQPF19N20 MOSFET N-CH 200V 11.8A TO220F Fairchild Semiconductor	15,905	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11.8A (Tc)	10V	150mOhm @ 5.9A, 10V	Through Hole	5V @ 250µA	40 nC @ 10 V	200 V	±30V	1600 pF @ 25 V	-	-	TO-220F-3	-	50W (Tc)	-55°C ~ 150°C (TJ)
FCPF1300N80ZYD MOSFET N-CH 800V 4A TO220F-3 Fairchild Semiconductor	750	-	询价单	数据表	SuperFET® II	TO-220-3 Full Pack, Formed Leads	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.3Ohm @ 2A, 10V	Through Hole	4.5V @ 400µA	21 nC @ 10 V	800 V	±20V	880 pF @ 100 V	-	-	TO-220F-3 (Y-Forming)	-	24W (Tc)	-55°C ~ 150°C (TJ)
FCPF7N60YDTU MOSFET N-CH 600V 7A TO220F-3 Fairchild Semiconductor	2,683	-	询价单	数据表	SuperFET™	TO-220-3 Full Pack, Formed Leads	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3.5A, 10V	Through Hole	5V @ 250µA	30 nC @ 10 V	600 V	±30V	920 pF @ 25 V	-	-	TO-220F-3 (Y-Forming)	-	31W (Tc)	-55°C ~ 150°C (TJ)
FDB8870 MOSFET N-CH 30V 23A/160A TO263AB Fairchild Semiconductor	2,877	-	询价单	数据表	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	23A (Ta), 160A (Tc)	4.5V, 10V	3.9mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	132 nC @ 10 V	30 V	±20V	5200 pF @ 15 V	-	-	TO-263 (D2PAK)	-	160W (Tc)	-55°C ~ 175°C (TJ)
FCP4N60 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	1,335	-	询价单	数据表	SuperFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.9A (Tc)	10V	1.2Ohm @ 2A, 10V	Through Hole	5V @ 250µA	16.6 nC @ 10 V	600 V	±30V	540 pF @ 25 V	-	-	TO-220-3	-	50W (Tc)	-55°C ~ 150°C (TJ)
FDB8444 POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	84,031	-	询价单	数据表	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	5.5mOhm @ 70A, 10V	Surface Mount	4V @ 250µA	128 nC @ 10 V	40 V	±20V	8035 pF @ 25 V	-	-	TO-263 (D2PAK)	-	167W (Tc)	-55°C ~ 175°C (TJ)
FCPF4300N80Z MOSFET N-CH 800V 1.6A TO220F Fairchild Semiconductor	931	-	询价单	数据表	SuperFET® II	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.6A (Tc)	10V	4.3Ohm @ 800mA, 10V	Through Hole	4.5V @ 160µA	8.8 nC @ 10 V	800 V	±20V	355 pF @ 100 V	-	-	TO-220F-3	-	19.2W (Tc)	-55°C ~ 150°C (TJ)
FQPF2N80YDTU MOSFET N-CH 800V 1.5A TO220F-3 Fairchild Semiconductor	425	-	询价单	数据表	QFET®	TO-220-3 Full Pack, Formed Leads	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Tc)	10V	6.3Ohm @ 750mA, 10V	Through Hole	5V @ 250µA	15 nC @ 10 V	800 V	±30V	550 pF @ 25 V	-	-	TO-220F-3 (Y-Forming)	-	35W (Tc)	-55°C ~ 150°C (TJ)

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