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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFU220BTU

IRFU220BTU

IRFU220 - HEXFET N-CHANNEL POWER

Fairchild Semiconductor

2,232 -
IRFU220BTU

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDPF5N50FT

FDPF5N50FT

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

57,300 -
FDPF5N50FT

数据表

UniFET™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.55Ohm @ 2.25A, 10V Through Hole 5V @ 250µA 8 nC @ 10 V 500 V ±30V 700 pF @ 25 V - - TO-220F-3 - 28W (Tc) -55°C ~ 150°C (TJ)
FDMS7572S

FDMS7572S

MOSFET N-CH 25V 23A/49A 8PQFN

Fairchild Semiconductor

45,000 -
FDMS7572S

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 23A (Ta), 49A (Tc) 4.5V, 10V 2.9mOhm @ 23A, 10V Surface Mount 3V @ 1mA 45 nC @ 10 V 25 V ±20V 2780 pF @ 13 V - - 8-PQFN (5x6) - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ)
FDP16AN08A0

FDP16AN08A0

MOSFET N-CH 75V 9A/58A TO220-3

Fairchild Semiconductor

3,200 -
FDP16AN08A0

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Ta), 58A (Tc) 6V, 10V 16mOhm @ 58A, 10V Through Hole 4V @ 250µA 42 nC @ 10 V 75 V ±20V 1857 pF @ 25 V - - TO-220-3 - 135W (Tc) -55°C ~ 175°C (TJ)
FDP3672

FDP3672

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor

7,244 -
FDP3672

数据表

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 5.9A (Ta), 41A (Tc) 6V, 10V 33mOhm @ 41A, 10V Through Hole 4V @ 250µA 37 nC @ 10 V 105 V ±20V 1670 pF @ 25 V - - TO-220-3 - 135W (Tc) -55°C ~ 175°C (TJ)
FDMS8026S

FDMS8026S

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

42,000 -
FDMS8026S

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 22A (Tc) 4.5V, 10V 4.3mOhm @ 19A, 10V Surface Mount 3V @ 1mA 37 nC @ 10 V 30 V ±20V 2280 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
FDS8672S

FDS8672S

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

187,604 -
FDS8672S

数据表

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Ta) 4.5V, 10V 4.8mOhm @ 18A, 10V Surface Mount 3V @ 1mA 41 nC @ 10 V 30 V ±20V 2670 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDPF13N50FT

FDPF13N50FT

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

26,239 -
FDPF13N50FT

数据表

UniFET™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 540mOhm @ 6A, 10V Through Hole 5V @ 250µA 39 nC @ 10 V 500 V ±30V 1930 pF @ 25 V - - TO-220F-3 - 42W (Tc) -55°C ~ 150°C (TJ)
FDPF12N50FT

FDPF12N50FT

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

24,145 -
FDPF12N50FT

数据表

UniFET™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 11.5A (Tc) 10V 700mOhm @ 6A, 10V Through Hole 5V @ 250µA 30 nC @ 10 V 500 V ±30V 1395 pF @ 25 V - - TO-220F-3 - 42W (Tc) -55°C ~ 150°C (TJ)
FDPF8N50NZU

FDPF8N50NZU

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

3,716 -
FDPF8N50NZU

数据表

UniFET-II™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 1.2Ohm @ 4A, 10V Through Hole 5V @ 250µA 18 nC @ 10 V 500 V ±25V 735 pF @ 25 V - - TO-220F-3 - 40W (Tc) -55°C ~ 150°C (TJ)
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