Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 107

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
NDS8425 SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	60,029	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7.4A (Ta)	2.7V, 4.5V	22mOhm @ 7.4A, 4.5V	Surface Mount	1.5V @ 250µA	18 nC @ 4.5 V	20 V	±8V	1098 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
FDPF5N50NZ POWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor	412,929	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQP6N60C POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor	20,356	-	询价单	数据表	QFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	2Ohm @ 2.75A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	600 V	±30V	810 pF @ 25 V	-	-	TO-220-3	-	125W (Tc)	-55°C ~ 150°C (TJ)
FDPF5N50NZF MOSFET N-CH 500V 4.2A TO220F Fairchild Semiconductor	551,340	-	询价单	数据表	UniFET-II™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.2A (Tc)	10V	1.75Ohm @ 2.1A, 10V	Through Hole	5V @ 250µA	12 nC @ 10 V	500 V	±25V	485 pF @ 25 V	-	-	TO-220F-3	-	30W (Tc)	-55°C ~ 150°C (TJ)
FQI5N60CTU MOSFET N-CH 600V 4.5A I2PAK Fairchild Semiconductor	34,688	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	2.5Ohm @ 2.25A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	600 V	±30V	670 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 100W (Tc)	-55°C ~ 150°C (TJ)
FDPF55N06 POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor	132,398	-	询价单	数据表	UniFET™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	22mOhm @ 27.5A, 10V	Through Hole	4V @ 250µA	37 nC @ 10 V	60 V	±25V	1510 pF @ 25 V	-	-	TO-220F-3	-	48W (Tc)	-55°C ~ 150°C (TJ)
FDMS8027S POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	18,985	-	询价单	数据表	PowerTrench®, SyncFET™	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta), 22A (Tc)	4.5V, 10V	5mOhm @ 18A, 10V	Surface Mount	3V @ 1mA	31 nC @ 10 V	30 V	±20V	1815 pF @ 15 V	-	-	8-PQFN (5x6)	-	2.5W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)
FDB86102LZ POWER FIELD-EFFECT TRANSISTOR, 8 Fairchild Semiconductor	6,918	-	询价单	数据表	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta), 30A (Tc)	4.5V, 10V	24mOhm @ 8.3A, 10V	Surface Mount	3V @ 250µA	21 nC @ 10 V	100 V	±20V	1275 pF @ 50 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta)	-55°C ~ 150°C (TJ)
FDD6030L POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor	635,701	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 50A (Tc)	4.5V, 10V	14.5mOhm @ 12A, 10V	Surface Mount	3V @ 250µA	28 nC @ 5 V	30 V	±20V	1230 pF @ 15 V	-	-	TO-252 (DPAK)	-	3.2W (Ta), 56W (Tc)	-55°C ~ 175°C (TJ)
FDMS7660 POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	14,176	-	询价单	数据表	PowerTrench®	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta), 42A (Tc)	4.5V, 10V	2.8mOhm @ 25A, 10V	Surface Mount	3V @ 250µA	84 nC @ 10 V	30 V	±20V	5565 pF @ 15 V	-	-	8-PQFN (5x6)	-	2.5W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)

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