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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLR130ATF13A, 100V, 0.12OHM, N-CHANNEL MO Fairchild Semiconductor |
2,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDP7030BLPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
56,536 | - |
|
数据表 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Ta) | 4.5V, 10V | 9mOhm @ 30A, 10V | Through Hole | 3V @ 250µA | 24 nC @ 5 V | 30 V | ±20V | 1760 pF @ 15 V | - | - | TO-220-3 | - | 60W (Tc) | -65°C ~ 175°C (TJ) |
|
FDPF7N60NZTMOSFET N-CH 600V 6.5A TO220F Fairchild Semiconductor |
5,000 | - |
|
数据表 |
UniFET-II™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 1.25Ohm @ 3.25A, 10V | Through Hole | 5V @ 250µA | 17 nC @ 10 V | 600 V | ±30V | 730 pF @ 25 V | - | - | TO-220F-3 | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
FDMS7580POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
12,000 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Ta), 29A (Tc) | 4.5V, 10V | 7.5mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 20 nC @ 10 V | 25 V | ±20V | 1190 pF @ 13 V | - | - | 8-PQFN (5x6) | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FQP3N80CPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
40,533 | - |
|
数据表 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | Through Hole | 5V @ 250µA | 16.5 nC @ 10 V | 800 V | ±30V | 705 pF @ 25 V | - | - | TO-220-3 | - | 107W (Tc) | -55°C ~ 150°C (TJ) |
|
FQPF5N50CYDTUPOWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |
34,463 | - |
|
数据表 |
QFET® | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | Through Hole | 4V @ 250µA | 24 nC @ 10 V | 500 V | ±30V | 625 pF @ 25 V | - | - | TO-220F-3 (Y-Forming) | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
FDPF18N20FT-GMOSFET N-CH 200V 18A TO220F Fairchild Semiconductor |
1,246 | - |
|
数据表 |
UniFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 140mOhm @ 9A, 10V | Through Hole | 5V @ 250µA | 26 nC @ 10 V | 200 V | ±30V | 1180 pF @ 25 V | - | - | TO-220F-3 | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
FDC697P8A, 20V, 0.02OHM, P-CHANNEL MOSF Fairchild Semiconductor |
69,811 | - |
|
数据表 |
PowerTrench® | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 8A (Ta) | 1.8V, 4.5V | 20mOhm @ 8A, 4.5V | Surface Mount | 1.5V @ 250µA | 55 nC @ 4.5 V | 20 V | ±8V | 3524 pF @ 10 V | - | - | SuperSOT™-6 FLMP | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
FCD900N60ZPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
1,213 | - |
|
数据表 |
SuperFET® II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | Surface Mount | 3.5V @ 250µA | 17 nC @ 10 V | 600 V | ±20V | 720 pF @ 25 V | - | - | TO-252 (DPAK) | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FQB6N40CTMMOSFET N-CH 400V 6A D2PAK Fairchild Semiconductor |
2,400 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±30V | 625 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 73W (Tc) | -55°C ~ 150°C (TJ) |
