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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP6N40C

FQP6N40C

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

10,000 -
FQP6N40C

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1Ohm @ 3A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 400 V ±30V 625 pF @ 25 V - - TO-220-3 - 73W (Tc) -55°C ~ 150°C (TJ)
HUF75321P3

HUF75321P3

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

6,903 -
HUF75321P3

数据表

UltraFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 34mOhm @ 35A, 10V Through Hole 4V @ 250µA 44 nC @ 20 V 55 V ±20V 680 pF @ 25 V - - TO-220-3 - 93W (Tc) -55°C ~ 175°C (TJ)
FDPF3N50NZ

FDPF3N50NZ

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

5,000 -
FDPF3N50NZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FQP10N20C

FQP10N20C

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor

17,000 -
FQP10N20C

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V Through Hole 4V @ 250µA 26 nC @ 10 V 200 V ±30V 510 pF @ 25 V - - TO-220-3 - 72W (Tc) -55°C ~ 150°C (TJ)
FQPF630

FQPF630

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

9,015 -
FQPF630

数据表

QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 6.3A (Tc) 10V 400mOhm @ 3.15A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 200 V ±25V 550 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 150°C (TJ)
FDMC7680

FDMC7680

MOSFET N-CH 30V 14.8A 8MLP

Fairchild Semiconductor

9,000 -
FDMC7680

数据表

- 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 14.8A (Ta) 4.5V, 10V 7.2mOhm @ 14.8A, 10V Surface Mount 3V @ 250µA 42 nC @ 10 V 30 V ±20V 2855 pF @ 15 V - - 8-MLP (3.3x3.3) - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ)
FDMC8854

FDMC8854

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

1,100 -
FDMC8854

数据表

PowerTrench® 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V Surface Mount 3V @ 250µA 57 nC @ 10 V 30 V ±20V 3405 pF @ 10 V - - 8-MLP (3.3x3.3) - 2W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
FQPF2N70

FQPF2N70

MOSFET N-CH 700V 2A TO220F

Fairchild Semiconductor

42,241 -
FQPF2N70

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 6.3Ohm @ 1A, 10V Through Hole 5V @ 250µA 11 nC @ 10 V 700 V ±30V 350 pF @ 25 V - - TO-220F-3 - 28W (Tc) -55°C ~ 150°C (TJ)
FDPF680N10T

FDPF680N10T

MOSFET N-CH 100V 12A TO220F

Fairchild Semiconductor

29,806 -
FDPF680N10T

数据表

PowerTrench® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 68mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 17 nC @ 10 V 100 V ±20V 1000 pF @ 50 V - - TO-220F-3 - 24W (Tc) -55°C ~ 150°C (TJ)
IRFR420T

IRFR420T

2.5A, 500V, 3OHM, N-CHANNEL MOSF

Fairchild Semiconductor

7,500 -
IRFR420T

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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