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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQU9N25TU

FQU9N25TU

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

8,414 -
FQU9N25TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 250 V ±30V 700 pF @ 25 V - - IPAK - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
FDMS4435BZ

FDMS4435BZ

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor

1,500 -
FDMS4435BZ

数据表

PowerTrench® 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 9A (Ta), 18A (Tc) 4.5V, 10V 20mOhm @ 9A, 10V Surface Mount 3V @ 250µA 47 nC @ 10 V 30 V ±25V 2050 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
FDD6680AS

FDD6680AS

MOSFET N-CH 30V 55A TO252

Fairchild Semiconductor

9,266 -
FDD6680AS

数据表

PowerTrench®, SyncFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V Surface Mount 3V @ 1mA 29 nC @ 10 V 30 V ±20V 1200 pF @ 15 V - - TO-252 (DPAK) - 60W (Ta) -55°C ~ 150°C (TJ)
RFP4N05L

RFP4N05L

4A, 50V, 0.8OHM, N-CHANNEL MOSFE

Fairchild Semiconductor

9,200 -
RFP4N05L

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDMS7670

FDMS7670

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

85,098 -
FDMS7670

数据表

PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 42A (Tc) 4.5V, 10V 3.8mOhm @ 21A, 10V Surface Mount 3V @ 250µA 56 nC @ 10 V 30 V ±20V 4105 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 62W (Tc) -55°C ~ 150°C (TJ)
FDMC7660S

FDMC7660S

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

9,685 -
FDMC7660S

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 40A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V Surface Mount 2.5V @ 1mA 66 nC @ 10 V 30 V ±20V 4325 pF @ 15 V - - Power33 - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
FCU3400N80Z

FCU3400N80Z

MOSFET N-CH 800V 2A I-PAK

Fairchild Semiconductor

1,691 -
FCU3400N80Z

数据表

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 3.4Ohm @ 1A, 10V Through Hole 4.5V @ 200µA 9.6 nC @ 10 V 800 V ±20V 400 pF @ 100 V - - IPAK - 32W (Tc) -55°C ~ 150°C (TJ)
FDPF5N50T

FDPF5N50T

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor

55,864 -
FDPF5N50T

数据表

UniFET™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 500 V ±30V 640 pF @ 25 V - - TO-220F-3 - 28W (Tc) -55°C ~ 150°C (TJ)
FDMS8023S

FDMS8023S

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

1,932 -
FDMS8023S

数据表

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 49A (Tc) 4.5V, 10V 2.4mOhm @ 26A, 10V Surface Mount 3V @ 1mA 57 nC @ 10 V 30 V ±20V 3550 pF @ 15 V - - 8-PQFN (5x6) - 2.5W (Ta), 59W (Tc) -55°C ~ 150°C (TJ)
FDPF5N50UT

FDPF5N50UT

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

17,120 -
FDPF5N50UT

数据表

FRFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2Ohm @ 2A, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 500 V ±30V 650 pF @ 25 V - - TO-220F-3 - 28W (Tc) -55°C ~ 150°C (TJ)
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