| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDS8449-GFDS8449 - 40V MOSFET N CHANNEL Fairchild Semiconductor |
1,646 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.6A (Ta) | 4.5V, 10V | 29mOhm @ 7.6A, 10V | Surface Mount | 3V @ 250µA | 11 nC @ 5 V | 40 V | ±20V | 760 pF @ 20 V | - | - | 8-SOIC | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
FDS6298POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
244,466 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V, 10V | 9mOhm @ 13A, 10V | Surface Mount | 3V @ 250µA | 14 nC @ 5 V | 30 V | ±20V | 1108 pF @ 15 V | - | - | 8-SOIC | - | 3W (Ta) | -55°C ~ 150°C (TJ) |
|
FDMS7672POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
3,000 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Ta), 28A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | Surface Mount | 3V @ 250µA | 44 nC @ 10 V | 30 V | ±20V | 2960 pF @ 15 V | - | - | Power56 | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) |
|
NDP4050NDP4050 - 15A, 50V, 0.1OHM, N-CH Fairchild Semiconductor |
1,980 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | - | 100mOhm @ 7.5A, 10V | Through Hole | 4V @ 250µA | 17 nC @ 10 V | 50 V | - | 450 pF @ 25 V | - | - | TO-220-3 | - | - | - |
|
FDS6692APOWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
1,731 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Ta) | 4.5V, 10V | 11.5mOhm @ 9A, 10V | Surface Mount | 2.5V @ 250µA | 29 nC @ 10 V | 30 V | ±20V | 1610 pF @ 15 V | - | - | 8-SOIC | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) |
|
NDP5060NDP5060 - 26A, 60V, 0.05OHM, N-C Fairchild Semiconductor |
1,080 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDS6676ASSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
5,369 | - |
|
数据表 |
PowerTrench®, SyncFET™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14.5A (Ta) | 4.5V, 10V | 6mOhm @ 14.5A, 10V | Surface Mount | 3V @ 1mA | 63 nC @ 10 V | 30 V | ±20V | 2510 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FDMS7570SPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
17,297 | - |
|
数据表 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Ta), 49A (Tc) | 4.5V, 10V | 1.95mOhm @ 28A, 10V | Surface Mount | 3V @ 1mA | 69 nC @ 10 V | 25 V | ±20V | 4515 pF @ 13 V | - | - | 8-PQFN (5x6) | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP4N20LPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
2,000 | - |
|
数据表 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3.8A (Tc) | 5V, 10V | 1.35Ohm @ 1.9A, 10V | Through Hole | 2V @ 250µA | 5.2 nC @ 5 V | 200 V | ±20V | 310 pF @ 25 V | - | - | TO-220-3 | - | 45W (Tc) | -55°C ~ 150°C (TJ) |
|
FQU5N40TUPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
36,535 | - |
|
数据表 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | Through Hole | 5V @ 250µA | 13 nC @ 10 V | 400 V | ±30V | 460 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) |