Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 12

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHG15N80AEF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	438	-	询价单	数据表	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	350mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	54 nC @ 10 V	800 V	±30V	1128 pF @ 100 V	-	-	TO-247AC	-	156W (Tc)	-55°C ~ 150°C (TJ)
SI1071X-T1-GE3 MOSFET P-CH 30V 0.96A SC89-6 Vishay Siliconix	9,276	-	询价单	数据表	TrenchFET®	SOT-563, SOT-666	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	960mA (Ta)	2.5V, 10V	167mOhm @ 960mA, 10V	Surface Mount	1.45V @ 250µA	13.3 nC @ 10 V	30 V	±12V	315 pF @ 15 V	-	-	SC-89 (SOT-563F)	-	236mW (Ta)	-55°C ~ 150°C (TJ)
SI1307EDL-T1-GE3 MOSFET P-CH 12V 850MA SC70-3 Vishay Siliconix	2,138	-	询价单	数据表	-	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	850mA (Ta)	1.8V, 4.5V	290mOhm @ 1A, 4.5V	Surface Mount	450mV @ 250µA (Min)	5 nC @ 4.5 V	12 V	±8V	-	-	-	SC-70-3	-	290mW (Ta)	-55°C ~ 150°C (TJ)
SI5853DDC-T1-E3 MOSFET P-CH 20V 4A 1206-8 Vishay Siliconix	4,862	-	询价单	数据表	LITTLE FOOT®	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	1.8V, 4.5V	105mOhm @ 2.9A, 4.5V	Surface Mount	1V @ 250µA	12 nC @ 8 V	20 V	±8V	320 pF @ 10 V	-	Schottky Diode (Isolated)	1206-8 ChipFET™	-	1.3W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)
SIS439DNT-T1-GE3 MOSFET P-CH 30V 50A PPAK1212-8S Vishay Siliconix	8,577	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	11mOhm @ 14A, 10V	Surface Mount	2.8V @ 250µA	68 nC @ 10 V	30 V	±20V	2135 pF @ 15 V	-	-	PowerPAK® 1212-8S	-	3.8W (Ta), 52.1W (Tc)	-50°C ~ 150°C (TJ)
SIHF15N60E-GE3 MOSFET N-CH 600V 15A TO220 Vishay Siliconix	779	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	280mOhm @ 8A, 10V	Through Hole	4V @ 250µA	78 nC @ 10 V	600 V	±30V	1350 pF @ 100 V	-	-	TO-220 Full Pack	-	34W (Tc)	-55°C ~ 150°C (TJ)
SIHB15N60E-GE3 MOSFET N-CH 600V 15A D2PAK Vishay Siliconix	1,347	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	280mOhm @ 8A, 10V	Surface Mount	4V @ 250µA	78 nC @ 10 V	600 V	±30V	1350 pF @ 100 V	-	-	TO-263 (D2PAK)	-	180W (Tc)	-55°C ~ 150°C (TJ)
SI7192DP-T1-GE3 MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix	2,895	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	1.9mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	135 nC @ 10 V	30 V	±20V	5800 pF @ 15 V	-	-	PowerPAK® SO-8	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)
SIHG17N80AEF-GE3 E SERIES POWER MOSFET WITH FAST Vishay Siliconix	294	-	询价单	数据表	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	305mOhm @ 8.5A, 10V	Through Hole	4V @ 250µA	63 nC @ 10 V	800 V	±30V	1300 pF @ 100 V	-	-	TO-247AC	-	179W (Tc)	-55°C ~ 150°C (TJ)
SIHP23N60E-GE3 MOSFET N-CH 600V 23A TO220AB Vishay Siliconix	813	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	10V	158mOhm @ 12A, 10V	Through Hole	4V @ 250µA	95 nC @ 10 V	600 V	±30V	2418 pF @ 100 V	-	-	TO-220AB	-	227W (Tc)	-55°C ~ 150°C (TJ)

共 3677 条记录«上一页 1... 8 9 10 111213 14 15...368 下一页»