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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI5449DC-T1-E3MOSFET P-CH 30V 3.1A 1206-8 Vishay Siliconix |
5,360 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.1A (Ta) | 2.5V, 4.5V | 85mOhm @ 3.1A, 4.5V | Surface Mount | 600mV @ 250µA (Min) | 11 nC @ 4.5 V | 30 V | ±12V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFSL9N60APBFMOSFET N-CH 600V 9.2A I2PAK Vishay Siliconix |
900 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 49 nC @ 10 V | 600 V | ±30V | 1400 pF @ 25 V | - | - | I2PAK | - | 170W (Tc) | -55°C ~ 150°C (TJ) |
|
SI7804DN-T1-GE3MOSFET N-CH 30V 6.5A PPAK1212-8 Vishay Siliconix |
9,870 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.5A (Ta) | 4.5V, 10V | 18.5mOhm @ 10A, 10V | Surface Mount | 1.8V @ 250µA | 13 nC @ 5 V | 30 V | ±20V | - | - | - | PowerPAK® 1212-8 | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHP21N80AEF-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
980 | - |
|
数据表 |
EF | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 16.3A (Tc) | 10V | 250mOhm @ 8.5A, 10V | Through Hole | 4V @ 250µA | 71 nC @ 10 V | 800 V | ±30V | 1511 pF @ 100 V | - | - | TO-220AB | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
SUM10250E-GE3MOSFET N-CH 250V 63.5A D2PAK Vishay Siliconix |
790 | - |
|
数据表 |
ThunderFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 63.5A (Tc) | 7.5V, 10V | 31mOhm @ 30A, 10V | Surface Mount | 4V @ 250µA | 88 nC @ 10 V | 250 V | ±20V | 3002 pF @ 125 V | - | - | TO-263 (D2PAK) | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFS11N50ATRLPMOSFET N-CH 500V 11A TO263AB Vishay Siliconix |
325 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | Surface Mount | 4V @ 250µA | 52 nC @ 10 V | 500 V | ±30V | 1423 pF @ 25 V | - | - | TO-263AB | - | 170W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHG15N80AE-GE3MOSFET N-CH 800V 13A TO247AC Vishay Siliconix |
400 | - |
|
数据表 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 350mOhm @ 7.5A, 10V | Through Hole | 4V @ 250µA | 53 nC @ 10 V | 800 V | ±30V | 1093 pF @ 100 V | - | - | TO-247AC | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1303DL-T1-E3MOSFET P-CH 20V 670MA SC70-3 Vishay Siliconix |
7,099 | - |
|
数据表 |
TrenchFET® | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 670mA (Ta) | 2.5V, 4.5V | 430mOhm @ 1A, 4.5V | Surface Mount | 1.4V @ 250µA | 2.2 nC @ 4.5 V | 20 V | ±12V | - | - | - | SC-70-3 | - | 290mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI1307EDL-T1-E3MOSFET P-CH 12V 850MA SC70-3 Vishay Siliconix |
3,242 | - |
|
数据表 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 850mA (Ta) | 1.8V, 4.5V | 290mOhm @ 1A, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 5 nC @ 4.5 V | 12 V | ±8V | - | - | - | SC-70-3 | - | 290mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI4346DY-T1-E3MOSFET N-CH 30V 5.9A 8SO Vishay Siliconix |
8,913 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.9A (Ta) | 2.5V, 10V | 23mOhm @ 8A, 10V | Surface Mount | 2V @ 250µA | 10 nC @ 4.5 V | 30 V | ±12V | - | - | - | 8-SOIC | - | 1.31W (Ta) | -55°C ~ 150°C (TJ) |
